940 nm Micro-Light-Emitting Diode Fabricated on Industry-Compatible 300 mm Si (100) Substrate by Metal–Organic Chemical Vapor Deposition

III-V light-emitting diodes (LEDs) have been attracting much interest due to their ability to cover a large spectrum of interesting wavelength for various applications. However, their incompatibility with integration on Si platforms compatible with complementary metal-oxide-semiconductor standards makes their high mass production a challenging task. Herein, the fabrication of 940 nm micro-LED on 300 mm Si wafers is reported. The active zone based on InGaAs/AlGaAs multiquantum wells is epitaxially grown by metal–organic chemical vapor deposition on two types of buffers, themselves on Si substrates: 500 nm thick GaAs and 500 nm GaAs 700 nm Ge bilayers. Very interesting results have been obtained on both structures in terms of external quantum efficiency (EQE), for example, about $2\hspace{0.17em}\times \hspace{0.17em}{10}^{-3}$% and $0.4\hspace{0.17em}\times \hspace{0.17em}{10}^{-3}$%, that is, 1/3rd and 1/15th the reference EQE obtained on bulk GaAs substrates. These results can easily be improved. Such demonstration offers a very promising roadmap for the monolithic integration of III-V μ-LED on Si platforms.