利用二维模型研究cdte基太阳能电池后界面不均匀性的影响

IF 6 3区 工程技术 Q2 ENERGY & FUELS
Solar RRL Pub Date : 2025-07-02 DOI:10.1002/solr.202500269
Ian M. Glass, Jared D. Friedl, Thomas A. M. Fiducia, Abasi Abudulimu, Eva M. Mulloy, Manoj K. Jamarkattel, Ebin Bastola, Randy J. Ellingson, Michael J. Heben, Adam B. Phillips
{"title":"利用二维模型研究cdte基太阳能电池后界面不均匀性的影响","authors":"Ian M. Glass,&nbsp;Jared D. Friedl,&nbsp;Thomas A. M. Fiducia,&nbsp;Abasi Abudulimu,&nbsp;Eva M. Mulloy,&nbsp;Manoj K. Jamarkattel,&nbsp;Ebin Bastola,&nbsp;Randy J. Ellingson,&nbsp;Michael J. Heben,&nbsp;Adam B. Phillips","doi":"10.1002/solr.202500269","DOIUrl":null,"url":null,"abstract":"<p>One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0000,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500269","citationCount":"0","resultStr":"{\"title\":\"Understanding the Effects of Inhomogeneities at the Back Interface of CdTe-Based Solar Cells Using 2D Modeling\",\"authors\":\"Ian M. Glass,&nbsp;Jared D. Friedl,&nbsp;Thomas A. M. Fiducia,&nbsp;Abasi Abudulimu,&nbsp;Eva M. Mulloy,&nbsp;Manoj K. Jamarkattel,&nbsp;Ebin Bastola,&nbsp;Randy J. Ellingson,&nbsp;Michael J. Heben,&nbsp;Adam B. Phillips\",\"doi\":\"10.1002/solr.202500269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.</p>\",\"PeriodicalId\":230,\"journal\":{\"name\":\"Solar RRL\",\"volume\":\"9 15\",\"pages\":\"\"},\"PeriodicalIF\":6.0000,\"publicationDate\":\"2025-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500269\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar RRL\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/solr.202500269\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar RRL","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/solr.202500269","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0

摘要

一维建模不能捕获基于cdte的器件中的横向不均匀性。在这里,我们使用二维模型来研究不同能量在后界面的作用。我们考虑通过降低后表面复合速度(BSRV)或减少后界面附近的向下带弯曲来改善后界面层(BIL)。我们发现,当BSRV降低,但强烈的向下弯曲带仍然存在时,器件性能没有变化,直到90%的后接口的BSRV被BIL提高。另一方面,任何覆盖的BIL,提高带弯曲导致设备的改进。我们使用带弯曲、后界面复合电流密度和通过器件的电压相关电流来了解这些改进。该模型表明,载流子的横向流动极大地影响了器件的性能,而这在并联二极管建模中是无法捕捉到的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Understanding the Effects of Inhomogeneities at the Back Interface of CdTe-Based Solar Cells Using 2D Modeling

Understanding the Effects of Inhomogeneities at the Back Interface of CdTe-Based Solar Cells Using 2D Modeling

One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.

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来源期刊
Solar RRL
Solar RRL Physics and Astronomy-Atomic and Molecular Physics, and Optics
CiteScore
12.10
自引率
6.30%
发文量
460
期刊介绍: Solar RRL, formerly known as Rapid Research Letters, has evolved to embrace a broader and more encompassing format. We publish Research Articles and Reviews covering all facets of solar energy conversion. This includes, but is not limited to, photovoltaics and solar cells (both established and emerging systems), as well as the development, characterization, and optimization of materials and devices. Additionally, we cover topics such as photovoltaic modules and systems, their installation and deployment, photocatalysis, solar fuels, photothermal and photoelectrochemical solar energy conversion, energy distribution, grid issues, and other relevant aspects. Join us in exploring the latest advancements in solar energy conversion research.
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