Jingze Zhao, Dmitri Donetski, Gela Kipshidze, Leon Shterengas
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引用次数: 0
摘要
本文研究了带隙为0.26 eV的富铟InGa0.2AsSb0.27合金的分子束外延生长,并与GaSb进行了晶格匹配(LM)。一个重要的发现是高材料指标,特别是少数载流子寿命(0.3 μs)和背景载流子浓度(8 × 1015 cm−3),其中产品达到参考InAsSb0.09合金的一半。这表明富铟InGaxAsSby合金LM to GaSb适用于整个中波红外波长范围内的低暗电流、高量子效率探测器。
Carrier recombination in MBE grown InGa0.2AsSb0.27 and InAsSb0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications
This study presents the molecular beam epitaxy growth of the indium-rich InGa0.2AsSb0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 1015 cm−3), in which the product reaches half the value of the reference InAsSb0.09 alloy. This indicates the suitability of indium-rich InGaxAsSby alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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