压力下ASnF3 (A = K, Rb)钙钛矿的调制物理性质:通过第一性原理增强光电性能的见解

Md N.J. Rifat , Mohammad Nazmul Hasan , Jahid Kabir Rony , Md Murshidul Islam , Md Saiduzzaman , Minhajul Islam
{"title":"压力下ASnF3 (A = K, Rb)钙钛矿的调制物理性质:通过第一性原理增强光电性能的见解","authors":"Md N.J. Rifat ,&nbsp;Mohammad Nazmul Hasan ,&nbsp;Jahid Kabir Rony ,&nbsp;Md Murshidul Islam ,&nbsp;Md Saiduzzaman ,&nbsp;Minhajul Islam","doi":"10.1016/j.rinma.2025.100747","DOIUrl":null,"url":null,"abstract":"<div><div>Researchers have become interested in inorganic metal halide perovskites due to their widespread use in numerous engineering and scientific fields. Given their significance, the fundamental physical properties of metal halide fluoroperovskites ASnF<sub>3</sub> (A = K, Rb) were investigated under applied pressure using density functional theory (DFT). The primary aim of this study is to enhance the distinct physical characteristics of these compounds by applying hydrostatic pressure, leading to a reduction in the electronic band gap. The Goldschmidt tolerance factor, formation energy, and Born stability criteria are used to verify the structural, thermodynamic, and mechanical stabilities, respectively. Furthermore, the lattice dynamical stability is confirmed by analyzing the phonon dispersion curves. The calculated lattice constant of RbSnF<sub>3</sub> (4.77 Å) is in excellent agreement with the previously reported value of 4.765 Å. As pressure increases, leading to enhanced atomic contact, the lattice constant, volume, and bond length exhibit a steady decrease. Within the 0–9 GPa pressure range, KSnF<sub>3</sub>'s band gap diminishes from 1.838 eV to 1.100 eV, while RbSnF<sub>3</sub>'s band gap reduces from 1.835 eV to 1.010 eV. The band gap values exhibit a noticeable enhancement when calculated using the GGA-RPBE functional, yielding 2.080 eV for KSnF<sub>3</sub> and 2.114 eV for RbSnF<sub>3</sub> at 0 GPa pressure. The PDOS and TDOS was analyzed to see the contribution of electrons in each compound with applied pressure. A variation in optical properties is seen due to applied pressure which makes them efficient for optoelectronic devices. The conduction spectrum becomes higher with applied pressure due to the reduction in band gap. The mechanical properties of the compounds directly reflect their ductile and anisotropic characteristics, both of which are significantly influenced by external pressure. Analysis of the elastic functions indicates that these compounds become even more versatile for various potential applications when subjected to hydrostatic pressure. The hardness (H<sub>V</sub>) values follow the trend RbSnF<sub>3</sub> &gt; KSnF<sub>3</sub>, whereas the machinability index (B/C<sub>44</sub>) exhibits the opposite trend, with KSnF<sub>3</sub> &gt; RbSnF<sub>3</sub> across the entire applied pressure range. We hope that this investigation makes a meaningful contribution to non-toxic halide perovskite materials research and serves as a foundation for future studies.</div></div>","PeriodicalId":101087,"journal":{"name":"Results in Materials","volume":"27 ","pages":"Article 100747"},"PeriodicalIF":0.0000,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modulating physical properties of ASnF3 (A = K, Rb) perovskites under pressure: Insights for enhanced optoelectronic performance via first-principles\",\"authors\":\"Md N.J. Rifat ,&nbsp;Mohammad Nazmul Hasan ,&nbsp;Jahid Kabir Rony ,&nbsp;Md Murshidul Islam ,&nbsp;Md Saiduzzaman ,&nbsp;Minhajul Islam\",\"doi\":\"10.1016/j.rinma.2025.100747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Researchers have become interested in inorganic metal halide perovskites due to their widespread use in numerous engineering and scientific fields. Given their significance, the fundamental physical properties of metal halide fluoroperovskites ASnF<sub>3</sub> (A = K, Rb) were investigated under applied pressure using density functional theory (DFT). The primary aim of this study is to enhance the distinct physical characteristics of these compounds by applying hydrostatic pressure, leading to a reduction in the electronic band gap. The Goldschmidt tolerance factor, formation energy, and Born stability criteria are used to verify the structural, thermodynamic, and mechanical stabilities, respectively. Furthermore, the lattice dynamical stability is confirmed by analyzing the phonon dispersion curves. The calculated lattice constant of RbSnF<sub>3</sub> (4.77 Å) is in excellent agreement with the previously reported value of 4.765 Å. As pressure increases, leading to enhanced atomic contact, the lattice constant, volume, and bond length exhibit a steady decrease. Within the 0–9 GPa pressure range, KSnF<sub>3</sub>'s band gap diminishes from 1.838 eV to 1.100 eV, while RbSnF<sub>3</sub>'s band gap reduces from 1.835 eV to 1.010 eV. The band gap values exhibit a noticeable enhancement when calculated using the GGA-RPBE functional, yielding 2.080 eV for KSnF<sub>3</sub> and 2.114 eV for RbSnF<sub>3</sub> at 0 GPa pressure. The PDOS and TDOS was analyzed to see the contribution of electrons in each compound with applied pressure. A variation in optical properties is seen due to applied pressure which makes them efficient for optoelectronic devices. The conduction spectrum becomes higher with applied pressure due to the reduction in band gap. The mechanical properties of the compounds directly reflect their ductile and anisotropic characteristics, both of which are significantly influenced by external pressure. Analysis of the elastic functions indicates that these compounds become even more versatile for various potential applications when subjected to hydrostatic pressure. The hardness (H<sub>V</sub>) values follow the trend RbSnF<sub>3</sub> &gt; KSnF<sub>3</sub>, whereas the machinability index (B/C<sub>44</sub>) exhibits the opposite trend, with KSnF<sub>3</sub> &gt; RbSnF<sub>3</sub> across the entire applied pressure range. We hope that this investigation makes a meaningful contribution to non-toxic halide perovskite materials research and serves as a foundation for future studies.</div></div>\",\"PeriodicalId\":101087,\"journal\":{\"name\":\"Results in Materials\",\"volume\":\"27 \",\"pages\":\"Article 100747\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Results in Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590048X25000925\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Results in Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590048X25000925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

由于无机金属卤化物钙钛矿在众多工程和科学领域的广泛应用,研究人员对其产生了浓厚的兴趣。鉴于其重要意义,利用密度泛函理论(DFT)研究了金属卤化物氟钙钛矿ASnF3 (A = K, Rb)在施加压力下的基本物理性质。本研究的主要目的是通过施加静水压力来增强这些化合物的独特物理特性,从而减少电子带隙。Goldschmidt容差系数、地层能量和Born稳定性标准分别用于验证结构、热力学和机械稳定性。此外,通过对声子色散曲线的分析证实了晶格的动力学稳定性。计算的RbSnF3晶格常数(4.77 Å)与先前报道的值4.765 Å非常吻合。随着压力的增加,原子接触增强,晶格常数、体积和键长呈现出稳定的减小。在0 ~ 9 GPa压力范围内,KSnF3的带隙从1.838 eV减小到1.100 eV, RbSnF3的带隙从1.835 eV减小到1.010 eV。当使用gga - rbe函数计算时,带隙值显示出明显的增强,在0 GPa压力下,KSnF3的带隙值为2.080 eV, RbSnF3的带隙值为2.114 eV。对PDOS和TDOS进行了分析,以观察施加压力时每种化合物中电子的贡献。由于施加压力,光学特性发生变化,这使得它们对光电器件有效。由于带隙的减小,随着施加压力的增加,导谱变高。复合材料的力学性能直接反映了其韧性和各向异性的特性,而这两个特性均受外界压力的显著影响。对弹性功能的分析表明,当受到静水压力时,这些化合物变得更加通用,具有各种潜在的应用。硬度(HV)值遵循RbSnF3 >;而可加工性指数(B/C44)则呈现相反的趋势,其中KSnF3 >;RbSnF3在整个施加压力范围内。我们希望本研究能为无毒卤化物钙钛矿材料的研究做出有意义的贡献,并为今后的研究奠定基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modulating physical properties of ASnF3 (A = K, Rb) perovskites under pressure: Insights for enhanced optoelectronic performance via first-principles
Researchers have become interested in inorganic metal halide perovskites due to their widespread use in numerous engineering and scientific fields. Given their significance, the fundamental physical properties of metal halide fluoroperovskites ASnF3 (A = K, Rb) were investigated under applied pressure using density functional theory (DFT). The primary aim of this study is to enhance the distinct physical characteristics of these compounds by applying hydrostatic pressure, leading to a reduction in the electronic band gap. The Goldschmidt tolerance factor, formation energy, and Born stability criteria are used to verify the structural, thermodynamic, and mechanical stabilities, respectively. Furthermore, the lattice dynamical stability is confirmed by analyzing the phonon dispersion curves. The calculated lattice constant of RbSnF3 (4.77 Å) is in excellent agreement with the previously reported value of 4.765 Å. As pressure increases, leading to enhanced atomic contact, the lattice constant, volume, and bond length exhibit a steady decrease. Within the 0–9 GPa pressure range, KSnF3's band gap diminishes from 1.838 eV to 1.100 eV, while RbSnF3's band gap reduces from 1.835 eV to 1.010 eV. The band gap values exhibit a noticeable enhancement when calculated using the GGA-RPBE functional, yielding 2.080 eV for KSnF3 and 2.114 eV for RbSnF3 at 0 GPa pressure. The PDOS and TDOS was analyzed to see the contribution of electrons in each compound with applied pressure. A variation in optical properties is seen due to applied pressure which makes them efficient for optoelectronic devices. The conduction spectrum becomes higher with applied pressure due to the reduction in band gap. The mechanical properties of the compounds directly reflect their ductile and anisotropic characteristics, both of which are significantly influenced by external pressure. Analysis of the elastic functions indicates that these compounds become even more versatile for various potential applications when subjected to hydrostatic pressure. The hardness (HV) values follow the trend RbSnF3 > KSnF3, whereas the machinability index (B/C44) exhibits the opposite trend, with KSnF3 > RbSnF3 across the entire applied pressure range. We hope that this investigation makes a meaningful contribution to non-toxic halide perovskite materials research and serves as a foundation for future studies.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
5.30
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信