mgo掺杂铌酸锂单晶高达400°C的畴壁电流演示

IF 3.3 4区 材料科学 Q3 CHEMISTRY, PHYSICAL
Hendrik Wulfmeier , Uliana Yakhnevych , Cornelius Boekhoff , Allan Diima , Marlo Kunzner , Leonard M. Verhoff , Jonas Paul , Julius Ratzenberger , Elke Beyreuther , Joshua Gössel , Iuliia Kiseleva , Michael Rüsing , Simone Sanna , Lukas M. Eng , Holger Fritze
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引用次数: 0

摘要

导电铁电畴壁(DWs)是一种很有前途的局部系统,可用于开发在高温下工作的纳米电子元件和器件传感器。DWs表现出与其承载体晶体非常不同的性质,特别是在高局部导电性方面。这项工作的目的是证明DW的导电性高达400°C,这大大扩展了以前的研究。利用掺杂5mol % mgo的铌酸锂单晶,研究了带电倾斜DWs的电导率。电流-电压(IV)曲线由直流静电计测量和阻抗谱确定,并发现是相同的。此外,阻抗谱可以识别诸如损坏电极之类的伪影。在重复加热循环中,温度相关的测量揭示了给定DW的两个不同的热活化能,其中较高的活化能仅在较高温度下测量。根据具体样品的不同,在160℃至230℃以上发现较高的活化能。这反过来表明,涉及到不止一种类型的缺陷/极化子,并且主要的输运机制随着温度的升高而变化。第一性原理原子模型表明,倾斜畴壁的电导率不能仅仅由二维载气的形成来解释,必须由跳变过程来支持。即使在高达400°C的温度下也是如此。我们的研究强调了扩展基于DW电流的纳米电子和传感器应用的潜力,甚至到目前为止尚未开发的温度范围高达400°C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Demonstration of domain wall current in MgO-doped lithium niobate single crystals up to 400 °C
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and device sensors to be operational at elevated temperatures. DWs show very different properties as compared to their hosting bulk crystal, in particular with respect to the high local electrical conductivity. The objective of this work is to demonstrate DW conductivity up to temperatures as high as 400 °C which extends previous studies significantly. Experimental investigation of the DW conductivity of charged, inclined DWs is performed using 5 mol % MgO-doped lithium niobate single crystals. Current–voltage (IV  ) curves are determined by DC electrometer measurements and impedance spectroscopy and found to be identical. Moreover, impedance spectroscopy enables to recognize artifacts such as damaged electrodes. Temperature dependent measurements over repeated heating cycles reveal two distinct thermal activation energies for a given DW, with the higher of the activation energies only measured at higher temperatures. Depending on the specific sample, the higher activation energy is found above 160 °C to 230 °C. This suggests, in turn, that more than one type of defect/polaron is involved, and that the dominant transport mechanism changes with increasing temperature. First principles atomistic modeling suggests that the conductivity of inclined domain walls cannot be solely explained by the formation of a 2D carrier gas and must be supported by hopping processes. This holds true even at temperatures as high as 400 °C. Our investigations underline the potential to extend DW current based nanoelectronic and sensor applications even into the so-far unexplored temperature range up to 400 °C.
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来源期刊
Solid State Ionics
Solid State Ionics 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.10%
发文量
152
审稿时长
58 days
期刊介绍: This interdisciplinary journal is devoted to the physics, chemistry and materials science of diffusion, mass transport, and reactivity of solids. The major part of each issue is devoted to articles on: (i) physics and chemistry of defects in solids; (ii) reactions in and on solids, e.g. intercalation, corrosion, oxidation, sintering; (iii) ion transport measurements, mechanisms and theory; (iv) solid state electrochemistry; (v) ionically-electronically mixed conducting solids. Related technological applications are also included, provided their characteristics are interpreted in terms of the basic solid state properties. Review papers and relevant symposium proceedings are welcome.
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