氮化镓基无结漏极扩展FinFET线性参数的温度依赖性

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-07-29 DOI:10.1016/j.mejo.2025.106813

N. Ashwini, K.S. Nikhil

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引用次数: 0

摘要

在这项工作中，使用三维热力学TCAD模拟研究了温度范围为100K至450K的基于氮化镓（GaN，一种宽间隙材料）的无结漏极扩展finfet （jldefinfet）的温度相关线性参数。分析了在不同温度下的转移特性、断流、跨导及其导数。此外，还详细研究了各种线性参数，如VIP2、VIP3、IIP3、IMD3和1 db压缩点对温度的影响。考虑中的器件具有金属栅极触点，提供了调整其性能参数（如通流、关流和阈值电压）的机会。并将所设计的器件与各种器件进行了对比分析，以验证器件设计的正确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET

In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as

V I P_{2}

V I P_{3}

I I P_{3}

I M D_{3}

, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.