一种紧凑、高线性ku波段SiGe HBT倒装芯片功率放大器模块，采用共享单中心抽头四路变压器Balun和双抽头二次谐波陷阱

IF 5.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2025-07-30 DOI:10.1109/jssc.2025.3591776

Byeongcheol Yoon, Yoongoo Kang, Junghyun Kim, Inchan Ju

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Compact, Highly Linear Ku-Band SiGe HBT Flip-Chip Power Amplifier Module Using a Shared Single Center-Tap Four-Way Transformer Balun With a Double-Tapped Second-Harmonic Trap

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.