雪崩区通过注入相对GaN肖特基势垒IMPATT二极管电效应的综合研究

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-07-22 DOI:10.1016/j.mejo.2025.106818

Xuan Huang, Lin-An Yang, Jian-Hua Zhou, Xin-Yi Wang, Dong-Liang Chen, Xiao-Hua Ma, Yue Hao

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引用次数: 0

摘要

本文利用Sentaurus TCAD研究了雪崩区对GaN肖特基势垒IMPATT二极管的影响。结果表明：随着雪崩区域的缩小，热场发射恶化，雪崩倍增系数和注入阶段迅速下降；它降低了初始振荡和输出。雪崩区从125 nm缩小到50 nm，注入相位从154°-169°减小到119°-136°。在设计的120 GHz频率下，启动效率和速度分别降低了18%和26%。此外，振荡输出能力和稳定性下降了50%和53%。同时，射频转换功率降低40%，效率提高50%，结温差从703℃降低到290℃。它提出了一种方法来调整脉冲宽度和瞬时输出功率之间的权衡雪崩区宽度的脉冲波模式，是优选的器件。

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A comprehensive study on the electrical effects of avalanche region on GaN Schottky barrier IMPATT diodes through injection phases

The article investigates the effect of the avalanche region on GaN Schottky barrier IMPATT diodes using Sentaurus TCAD. The results show that as the avalanche region shrinks, thermal field emission deteriorates, resulting in a rapid decline of the avalanche multiplication factor and injection phase. It degrades the initiating oscillation and output. Narrowing the avalanche region from 125 nm to 50 nm, the injection phase decreases from 154°–169° to 119°–136°. At the designed frequency of 120 GHz, the start-up efficiency and speed are reduced by 18 % and 26 %, respectively. Additionally, the oscillating output capability and stability decrease by 50 % and 53 %. Meanwhile, the radio frequency conversion power drops by 40 %, whereas its efficiency improves by 50 %, lowering the junction temperature difference from 703 °C to 290 °C. It presents a method to adjust trade-offs between pulse width and instantaneous output power by the width of the avalanche region for the pulsed wave mode that is preferred in the device.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.