具有峰值米勒平台电压跟踪和电压尾抑制的自适应三相GaN栅极驱动器可使开关损耗降低36.4%

IF 5.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2025-07-29 DOI:10.1109/jssc.2025.3591212

Shuo Zhang, Run Min, Desheng Zhang, Haoran Xu, Chang Liu, Qingyue Zhou, Qiaoling Tong, Xuecheng Zou

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Adaptive Three-Stage GaN Gate Driver With Peak Miller Plateau Voltage Tracking and Voltage Tailing Suppression for 36.4% Switching Loss Reduction

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.