脉冲激光和原子层沉积cmos兼容二氧化钒:实现超薄相变膜。

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Anna Varini, Cyrille Masserey, Vanessa Conti, Zahra Saadat Somaehsofla, Ehsan Ansari, Igor Stolichnov and Adrian M. Ionescu*, 
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引用次数: 0

摘要

二氧化钒(VO2)是一种著名的莫特绝缘体,是一种被高度研究的电子材料,在信息处理和存储方面具有广阔的应用前景,包括神经形态和脑启发电子学,高频可重构电子学,光电调制器,传感器和具有热调节的智能窗口。虽然外延VO2薄膜表现出特殊的性能,例如在金属-绝缘体过渡时电导率的急剧变化,但在硅衬底上制造多晶VO2薄膜通常涉及传输特性和开关性能的权衡,特别是对于高级栅极应用中所需的超薄层。在这项研究中,我们通过两种成熟的沉积技术:脉冲激光沉积(PLD)和原子层沉积(ALD),探索了VO2薄膜在标准cmos兼容湿氧化硅片上的生长动力学。通过结构和电学分析对厚度从200 nm到小于10 nm的VO2薄膜进行了系统表征,并优化了关键生长参数。在本研究中,温度和压力是影响VO2薄膜开关形貌和质量的关键因素。详细讨论了整个厚度范围内的生长动态和最佳生长条件。PLD和ALD具有明显的优势:PLD可以形成高密度薄膜,而ALD可以在复杂的3D结构上进行保形沉积。我们证明,只要仔细优化生长参数,这两种方法都可以成功地生产出厚度为6-8 nm的超薄VO2层,并具有适合实际应用的功能特性。这项工作强调了VO2在完全兼容cmos的相变开关器件中的潜力,并为优化使用不同技术(包括广泛使用的磁控溅射)生长的多晶VO2薄膜的生长工艺提供了有价值的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Vanadium dioxide (VO2), a well-known Mott insulator, is a highly studied electronic material with promising applications in information processing and storage, including neuromorphic and brain-inspired electronics, high-frequency reconfigurable electronics, optoelectronic modulators, sensors, and smart windows with thermal regulation. While epitaxial VO2 layers exhibit exceptional properties, such as a sharp and abrupt conductivity change at the metal–insulator transition, fabricating polycrystalline VO2 films on silicon substrates often involves trade-offs in transport characteristics and switching performance, especially for ultrathin layers required in advanced gate applications. In this study, we explore the growth dynamics of VO2 films on standard CMOS-compatible wet-oxidized silicon wafers by using two established deposition techniques: pulsed laser deposition (PLD) and atomic layer deposition (ALD). VO2 films, ranging in thickness from 200 nm to less than 10 nm, were systematically characterized through structural and electrical analyses to optimize key growth parameters. In this study, the temperature and pressure were identified as the key factors influencing the morphology and quality of switching in VO2 films. The growth dynamics and optimal growth conditions across the entire thickness range are discussed in detail. PLD and ALD offer distinct advantages: PLD enables the formation of high-density films, while ALD allows for conformal deposition on complex 3D structures. We demonstrate that both methods can successfully produce ultrathin VO2 layers down to 6–8 nm with functional properties suitable for practical applications, provided that growth parameters are carefully optimized. This work underscores the potential of VO2 for fully CMOS-compatible phase-change switching devices and provides valuable insights into optimizing growth processes for polycrystalline VO2 films grown with different techniques, including widely used magnetron sputtering.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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