pn型近红外高速石墨烯异质结光电探测器

IF 2.4 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Journal Pub Date : 2025-07-18 DOI:10.1109/JPHOT.2025.3590512

Yun Fang;Qingmin Fu;Yuhang Wei;Jian Liu;Wanchun Yang;Dandan Wang;Xue Zhang

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引用次数: 0

摘要

在这项工作中，提出了一种基于gaas衬底的pn型近红外高速石墨烯异质结光电探测器。该光电探测器仅由p型石墨烯异质结吸收部分和n型GaAs衬底组成，其中p型石墨烯异质结由石墨烯、InSb和AlSb层以自上而下的方式垂直堆叠而成。通过精确调整每个异质结构层的厚度和掺杂分布，开发了独特的石墨烯异质结，随后利用该异质结实现了具有卓越光响应行为的优化pn型光电探测器。同时，InSb介电层中的光生电子可以克服界面势能势垒注入石墨烯中，在石墨烯中通过弹道输运实现快速响应。数值模拟表明，所开发的石墨烯异质结光电探测器同时实现了：(1)高响应率为0.329 a /W,(2)超快的时间响应，上升和下降时间分别为13 ns和11 ns。

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PN-Type Near-Infrared High-Speed Graphene Heterojunction Photodetector

In this work, a GaAs-substrate-based PN-type near-infrared high-speed graphene heterojunction photodetector is proposed. The proposed photodetector is only composed of a P-type graphene heterojunction absorption part and a N-type GaAs substrate, where the P-type graphene heterojunction is formed by vertically stacking graphene, InSb, and AlSb layers in a top-down configuration. By precisely tuning the thickness and doping profile of each heterostructure layer, a distinctive graphene heterojunction is developed, which is subsequently utilized to realize an optimized PN-type photodetector exhibiting remarkable photoresponsive behavior. Meanwhile, the photogenerated electrons in the InSb dielectric layer can overcome the interfacial potential energy barrier and inject into graphene, achieving rapid response via ballistic transport in the graphene. Numerical simulations indicate the developed graphene heterojunction photodetector simultaneously attains: (i) a high responsivity of 0.329 A/W, and (ii) ultrafast temporal response, with rise and fall times of 13 ns and 11 ns, respectively.

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来源期刊

IEEE Photonics Journal ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

4.50

自引率

8.30%

发文量

489

审稿时长

1.4 months

期刊介绍： Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.