ROST技术生长的高挥发性掺杂物在NaI:Tl晶体中的分布

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-07-23 DOI:10.1016/j.jcrysgro.2025.128303

V. Protsenko, S. Gridin

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引用次数: 0

摘要

在NaI:Tl闪烁晶体中用作掺杂剂的碘化铊是一种高度挥发性的成分，当从熔体中拔出时，对晶体生长构成挑战。基于实验数据，对工业连续进料技术（ROST）生长的NaI晶体中的Tl分布进行了理论计算，并对参数进行了评估。为了达到目标的掺杂浓度，研究中考虑了一段加料和两段加料。结果显示了晶体中掺杂物的分布，这有助于优化原料NaI和TlI的加料速率。

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Distribution of the highly volatile dopant in NaI:Tl crystals grown by the ROST technology

Thallium iodide used as the dopant in NaI:Tl scintillation crystals is a highly volatile component that poses a challenge for crystal growth when pulling from the melt. A theoretical calculation of Tl distribution in NaI crystals grown by an industrial continuous feeding technology ’ROST’ was conducted based on experimental data to evaluate parameters. One-stage feeding and two-stage feeding were considered in the study to achieve a target dopant concentration. The results show both calculated and measured dopant distributions in the crystal, which can help optimize the feeding rates of the raw materials, NaI and TlI.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.