不同离子辐照下InxGa1-xN （x = 0.37-0.9）薄膜的拉曼光谱研究

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2025-07-28 DOI:10.1016/j.nimb.2025.165822

Xueting Liu , Limin Zhang , Ning Liu , Shuo Zhang , Tieshan Wang

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引用次数: 0

摘要

本文研究了碳(C)和氪（Kr）离子辐照对InxGa1-xN薄膜的损伤。在氮化镓（GaN）薄膜上生长了InxGa1-xN （x = 0.37-0.9）薄膜，并用C和Kr离子照射，在拉曼测量深度内平均损伤剂量约为每原子0.06位移（dpa）。用拉曼光谱分析了结构损伤、载流子浓度和晶格无序度的变化。结果表明，辐照引起晶格松弛，降低载流子浓度。随着InxGa1-xN中铟（In）含量(x)的增加，辐照抗性逐渐降低，这可能是由于Ga-N键的键能高于In- n键。此外，使用较重的Kr离子会导致InGaN薄膜中更明显的级联碰撞，在相同的dpa下，与较轻的C离子相比，导致更严重的结构破坏。

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Raman study of InxGa1-xN (x = 0.37–0.9) films irradiated with different ions

This study investigates damage in In_xGa_1-_xN films irradiated with carbon (C) and krypton (Kr) ions. The In_xGa_1-_xN (x = 0.37–0.9) films were grown on gallium nitride (GaN) epilayers and irradiated with C and Kr ions, resulting in an average damage dose of approximately 0.06 displacements per atom (dpa) within the Raman measured depth. Raman spectroscopy was used to assess the changes in structural damage, electron carrier concentration, and lattice disorder. Results show that irradiation causes lattice relaxation and reduces carrier concentration. The irradiation resistance decreased gradually with increasing indium (In) content (x) in In_xGa_1-_xN, which can be attributed to the higher bond energy of Ga-N bonds compared to In-N bonds. Furthermore, the use of heavier Kr ions, resulted in more pronounced cascade collisions in the InGaN films, leading to more severe structural damage compared to lighter C ions at the same dpa.

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.