Negin Beryani Nezafat, Ahana Bhattacharya, Sepideh Izadi, Inga Ennen, Martin Wortmann, Lauritz Schnatmann, Shahram Solaymani, Sławomir Kulesza, Miroslaw Bramowicz, Michael Westphal, Jan Biedinger, Karsten Rott, Michael Dittler, Andreas Hütten, Günter Reiss, Martin Mittendorff and Gabi Schierning*,
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Dephasing Mechanisms of Topologically Protected 2D Surface Carriers in Sputtered SnTe Thin Films
Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron–electron interactions in the thinnest film studied to 2D electron–electron interactions and finally to electron–phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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