40 GHz次太赫兹波辐照下甘氨酸晶体的风冷生长

IF 2 4区 材料科学 Q3 CRYSTALLOGRAPHY
Kazuma Iwasaki , Kairu Takashima , Sho Fujii , Tsuyoshi Kimura , Masaya Yamamoto , Tadao Tanabe
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引用次数: 0

摘要

在任何晶体生长中,了解太赫兹频率下振动的分子间相互作用是至关重要的,因为这些分子间相互作用决定了生长过程中分子的堆积。在本研究中,我们通过实验证实了在封闭体系中甘氨酸晶体的生长,晶体在没有辐射的情况下聚集,而在40 GHz电磁波的照射下不聚集。这说明亚太赫兹波激发分子间相互作用,阻止了水溶液内部的聚集,保持了过饱和亚稳态。这种亚太赫兹技术可用于控制化学工业过程中材料的溶解/沉淀状态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Glycine crystal growth under air-cooling with/without irradiation of 40 GHz sub-terahertz wave
In any crystal growth, it is essential to understand the intermolecular interactions vibrating at terahertz frequencies, since these intermolecular interactions determine the packing of molecules during the growth process. In this study, we experimentally confirmed that in the growth of glycine crystals in a closed system, crystals that aggregate in the absence of irradiation but do not aggregate under irradiation of 40 GHz electromagnetic waves. This suggests that the aggregation inside the aqueous solution was prevented by the excitation of intermolecular interactions by the sub-terahertz waves, and the metastable state of supersaturation was maintained. This sub-terahertz technology can be used to control the dissolution/precipitation state of materials in chemical industrial processes.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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