Isa Altoobaji;Ahmad Hassan;Mohamed Ali;Yves Audet;Ahmed Lakhssassi
{"title":"用于隔离传感器接口的具有共模瞬态抑制的紧凑型高速电容性数据传输链路","authors":"Isa Altoobaji;Ahmad Hassan;Mohamed Ali;Yves Audet;Ahmed Lakhssassi","doi":"10.1109/TVLSI.2025.3573226","DOIUrl":null,"url":null,"abstract":"In this article, a compact differential data transfer link architecture for isolated sensor interfaces (SIs) and immune to common mode transients (CMTs) is presented. The proposed architecture shows low latency supporting high-speed transmission with a low bit error rate (BER) in the presence of CMT noise for applications, such as data acquisition, biomedical equipment, and communication networks. In transportation applications, motors and actuators are subjected to harsh environmental conditions, e.g., lightning strikes and abnormal voltage operations. These conditions introduce noise and can cause damage to small electronics due to high-voltage power surges. To ensure human safety and circuitry protection, a data transfer system must be implemented between high-voltage and low-voltage domains. The proposed design has been simulated using Cadence tools, and a prototype has been manufactured in a 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process. The fabricated prototype consumes an effective silicon area of <inline-formula> <tex-math>$37.2\\times 10^{3}~\\mu $ </tex-math></inline-formula>m<sup>2</sup> and can sustain a breakdown voltage of 710 V<sub>rms</sub>. Experimental results show that the proposed solution achieves a CMT immunity (CMTI) of 2.5 kV/<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s at a data rate of 480 Mb/s with a BER of <inline-formula> <tex-math>$10^{-12}$ </tex-math></inline-formula>. The propagation delay is 3.9 ns with a 4 ps/°C variation rate over temperatures ranging from <inline-formula> <tex-math>$- 31~^{\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$100~^{\\circ }$ </tex-math></inline-formula>C. Under typical test conditions, the BER reaches <inline-formula> <tex-math>$10^{-15}$ </tex-math></inline-formula> with a peak-to-peak data dependent jitter (DDJ) of 29.8 ps.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 8","pages":"2163-2171"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Compact High-Speed Capacitive Data Transfer Link With Common Mode Transient Rejection for Isolated Sensor Interfaces\",\"authors\":\"Isa Altoobaji;Ahmad Hassan;Mohamed Ali;Yves Audet;Ahmed Lakhssassi\",\"doi\":\"10.1109/TVLSI.2025.3573226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, a compact differential data transfer link architecture for isolated sensor interfaces (SIs) and immune to common mode transients (CMTs) is presented. The proposed architecture shows low latency supporting high-speed transmission with a low bit error rate (BER) in the presence of CMT noise for applications, such as data acquisition, biomedical equipment, and communication networks. In transportation applications, motors and actuators are subjected to harsh environmental conditions, e.g., lightning strikes and abnormal voltage operations. These conditions introduce noise and can cause damage to small electronics due to high-voltage power surges. To ensure human safety and circuitry protection, a data transfer system must be implemented between high-voltage and low-voltage domains. The proposed design has been simulated using Cadence tools, and a prototype has been manufactured in a 0.18-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m CMOS process. The fabricated prototype consumes an effective silicon area of <inline-formula> <tex-math>$37.2\\\\times 10^{3}~\\\\mu $ </tex-math></inline-formula>m<sup>2</sup> and can sustain a breakdown voltage of 710 V<sub>rms</sub>. Experimental results show that the proposed solution achieves a CMT immunity (CMTI) of 2.5 kV/<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>s at a data rate of 480 Mb/s with a BER of <inline-formula> <tex-math>$10^{-12}$ </tex-math></inline-formula>. The propagation delay is 3.9 ns with a 4 ps/°C variation rate over temperatures ranging from <inline-formula> <tex-math>$- 31~^{\\\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$100~^{\\\\circ }$ </tex-math></inline-formula>C. Under typical test conditions, the BER reaches <inline-formula> <tex-math>$10^{-15}$ </tex-math></inline-formula> with a peak-to-peak data dependent jitter (DDJ) of 29.8 ps.\",\"PeriodicalId\":13425,\"journal\":{\"name\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"volume\":\"33 8\",\"pages\":\"2163-2171\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11021663/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11021663/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A Compact High-Speed Capacitive Data Transfer Link With Common Mode Transient Rejection for Isolated Sensor Interfaces
In this article, a compact differential data transfer link architecture for isolated sensor interfaces (SIs) and immune to common mode transients (CMTs) is presented. The proposed architecture shows low latency supporting high-speed transmission with a low bit error rate (BER) in the presence of CMT noise for applications, such as data acquisition, biomedical equipment, and communication networks. In transportation applications, motors and actuators are subjected to harsh environmental conditions, e.g., lightning strikes and abnormal voltage operations. These conditions introduce noise and can cause damage to small electronics due to high-voltage power surges. To ensure human safety and circuitry protection, a data transfer system must be implemented between high-voltage and low-voltage domains. The proposed design has been simulated using Cadence tools, and a prototype has been manufactured in a 0.18-$\mu $ m CMOS process. The fabricated prototype consumes an effective silicon area of $37.2\times 10^{3}~\mu $ m2 and can sustain a breakdown voltage of 710 Vrms. Experimental results show that the proposed solution achieves a CMT immunity (CMTI) of 2.5 kV/$\mu $ s at a data rate of 480 Mb/s with a BER of $10^{-12}$ . The propagation delay is 3.9 ns with a 4 ps/°C variation rate over temperatures ranging from $- 31~^{\circ }$ C to $100~^{\circ }$ C. Under typical test conditions, the BER reaches $10^{-15}$ with a peak-to-peak data dependent jitter (DDJ) of 29.8 ps.
期刊介绍:
The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society.
Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels.
To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.