{"title":"基于混合RRAM和SRAM的高密度高能效CNM宏","authors":"Jun Wang;Shengzhe Yan;Xiangqu Fu;Zhihang Qian;Zhi Li;Zeyu Guo;Zhuoyu Dai;Zhaori Cong;Chunmeng Dou;Feng Zhang;Jinshan Yue;Dashan Shang","doi":"10.1109/TVLSI.2025.3576889","DOIUrl":null,"url":null,"abstract":"The big data era has facilitated various memory-centric algorithms, such as the Transformer decoder, neural network, stochastic computing (SC), and genetic sequence matching, which impose high demands on memory capacity, bandwidth, and access power consumption. The emerging nonvolatile memory devices and compute-near-memory (CNM) architecture offer a promising solution for memory-bound tasks. This work proposes a hybrid resistive random access memory (RRAM) and static random access memory (SRAM) CNM architecture. The main contributions include: 1) proposing an energy-efficient and high-density CNM architecture based on the hybrid integration of RRAM and SRAM arrays; 2) designing low-power CNM circuits using the logic gates and dynamic-logic adder with configurable datapath; and 3) proposing a broadcast mechanism with output-stationary workflow to reduce memory access. The proposed RRAM-SRAM CNM architecture and dataflow tailored for four distinct applications are evaluated at a 28-nm technology, achieving 4.62-TOPS<inline-formula> <tex-math>$/$ </tex-math></inline-formula>W energy efficiency and 1.20-Mb<inline-formula> <tex-math>$/$ </tex-math></inline-formula>mm<sup>2</sup> memory density, which shows <inline-formula> <tex-math>$11.35\\times $ </tex-math></inline-formula>–<inline-formula> <tex-math>$25.81\\times $ </tex-math></inline-formula> and <inline-formula> <tex-math>$1.44\\times $ </tex-math></inline-formula>–<inline-formula> <tex-math>$4.92\\times $ </tex-math></inline-formula> improvement compared to previous works, respectively.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 8","pages":"2339-2343"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Density Energy-Efficient CNM Macro Using Hybrid RRAM and SRAM for Memory-Bound Applications\",\"authors\":\"Jun Wang;Shengzhe Yan;Xiangqu Fu;Zhihang Qian;Zhi Li;Zeyu Guo;Zhuoyu Dai;Zhaori Cong;Chunmeng Dou;Feng Zhang;Jinshan Yue;Dashan Shang\",\"doi\":\"10.1109/TVLSI.2025.3576889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The big data era has facilitated various memory-centric algorithms, such as the Transformer decoder, neural network, stochastic computing (SC), and genetic sequence matching, which impose high demands on memory capacity, bandwidth, and access power consumption. The emerging nonvolatile memory devices and compute-near-memory (CNM) architecture offer a promising solution for memory-bound tasks. This work proposes a hybrid resistive random access memory (RRAM) and static random access memory (SRAM) CNM architecture. The main contributions include: 1) proposing an energy-efficient and high-density CNM architecture based on the hybrid integration of RRAM and SRAM arrays; 2) designing low-power CNM circuits using the logic gates and dynamic-logic adder with configurable datapath; and 3) proposing a broadcast mechanism with output-stationary workflow to reduce memory access. The proposed RRAM-SRAM CNM architecture and dataflow tailored for four distinct applications are evaluated at a 28-nm technology, achieving 4.62-TOPS<inline-formula> <tex-math>$/$ </tex-math></inline-formula>W energy efficiency and 1.20-Mb<inline-formula> <tex-math>$/$ </tex-math></inline-formula>mm<sup>2</sup> memory density, which shows <inline-formula> <tex-math>$11.35\\\\times $ </tex-math></inline-formula>–<inline-formula> <tex-math>$25.81\\\\times $ </tex-math></inline-formula> and <inline-formula> <tex-math>$1.44\\\\times $ </tex-math></inline-formula>–<inline-formula> <tex-math>$4.92\\\\times $ </tex-math></inline-formula> improvement compared to previous works, respectively.\",\"PeriodicalId\":13425,\"journal\":{\"name\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"volume\":\"33 8\",\"pages\":\"2339-2343\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11038945/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11038945/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A High-Density Energy-Efficient CNM Macro Using Hybrid RRAM and SRAM for Memory-Bound Applications
The big data era has facilitated various memory-centric algorithms, such as the Transformer decoder, neural network, stochastic computing (SC), and genetic sequence matching, which impose high demands on memory capacity, bandwidth, and access power consumption. The emerging nonvolatile memory devices and compute-near-memory (CNM) architecture offer a promising solution for memory-bound tasks. This work proposes a hybrid resistive random access memory (RRAM) and static random access memory (SRAM) CNM architecture. The main contributions include: 1) proposing an energy-efficient and high-density CNM architecture based on the hybrid integration of RRAM and SRAM arrays; 2) designing low-power CNM circuits using the logic gates and dynamic-logic adder with configurable datapath; and 3) proposing a broadcast mechanism with output-stationary workflow to reduce memory access. The proposed RRAM-SRAM CNM architecture and dataflow tailored for four distinct applications are evaluated at a 28-nm technology, achieving 4.62-TOPS$/$ W energy efficiency and 1.20-Mb$/$ mm2 memory density, which shows $11.35\times $ –$25.81\times $ and $1.44\times $ –$4.92\times $ improvement compared to previous works, respectively.
期刊介绍:
The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society.
Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels.
To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.