{"title":"用于图案QLED显示器的刚性交联辅助无损直接光刻技术","authors":"Zhong Chen, Zhongwei Man, Shichao Rao, Jinxing Zhao, Shuaibing Wang, Runtong Zhang, Feng Teng, Aiwei Tang","doi":"10.1038/s41377-025-01918-7","DOIUrl":null,"url":null,"abstract":"<p>Recently, colloidal quantum dots (QDs) with high luminescent efficiency and tunable colors have become ideal materials for next-generation display devices. Direct photolithography is a powerful tool for patterning QD devices, but it faces the serious issue of degradation in the photophysical properties of the patterned QDs. Here, we use relatively rigid cyclopentane as a bridging group to design the crosslinker CPTA, achieving high-resolution direct photolithography of QDs with nearly nondestructive under ambient conditions. The key to the crosslinker design is the introduction of a rigid bridging group that elevates the LUMO level, providing a stronger energy barrier to prevent QD electrons from being trapped or undergoing non-radiative recombination, thus preserving their PL and EL properties. The efficient and high-resolution RGB line and dot arrays were fabricated with pixel sizes down to 1 μm and a resolution of up to 6350 PPI. The patterned RGB QD films, especially red QDs, maintained their optical and optoelectronic properties, with patterned red QLEDs achieving peak external quantum efficiency (EQE) of 21% and a maximum luminance (<i>L</i><sub>max</sub>) of ~180,000 cd m⁻², matching pristine devices. These results highlight the importance of photo-crosslinker design for nondestructive QDs patterning, paving the way for advanced display applications in patterned QLED technology.</p>","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"18 1","pages":""},"PeriodicalIF":20.6000,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays\",\"authors\":\"Zhong Chen, Zhongwei Man, Shichao Rao, Jinxing Zhao, Shuaibing Wang, Runtong Zhang, Feng Teng, Aiwei Tang\",\"doi\":\"10.1038/s41377-025-01918-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Recently, colloidal quantum dots (QDs) with high luminescent efficiency and tunable colors have become ideal materials for next-generation display devices. Direct photolithography is a powerful tool for patterning QD devices, but it faces the serious issue of degradation in the photophysical properties of the patterned QDs. Here, we use relatively rigid cyclopentane as a bridging group to design the crosslinker CPTA, achieving high-resolution direct photolithography of QDs with nearly nondestructive under ambient conditions. The key to the crosslinker design is the introduction of a rigid bridging group that elevates the LUMO level, providing a stronger energy barrier to prevent QD electrons from being trapped or undergoing non-radiative recombination, thus preserving their PL and EL properties. The efficient and high-resolution RGB line and dot arrays were fabricated with pixel sizes down to 1 μm and a resolution of up to 6350 PPI. The patterned RGB QD films, especially red QDs, maintained their optical and optoelectronic properties, with patterned red QLEDs achieving peak external quantum efficiency (EQE) of 21% and a maximum luminance (<i>L</i><sub>max</sub>) of ~180,000 cd m⁻², matching pristine devices. These results highlight the importance of photo-crosslinker design for nondestructive QDs patterning, paving the way for advanced display applications in patterned QLED technology.</p>\",\"PeriodicalId\":18069,\"journal\":{\"name\":\"Light-Science & Applications\",\"volume\":\"18 1\",\"pages\":\"\"},\"PeriodicalIF\":20.6000,\"publicationDate\":\"2025-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Light-Science & Applications\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.1038/s41377-025-01918-7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Light-Science & Applications","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1038/s41377-025-01918-7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
摘要
近年来,胶体量子点具有发光效率高、颜色可调等特点,已成为下一代显示器件的理想材料。直接光刻技术是一种强大的QD器件图像化工具,但它面临着图像化QD器件光物理性能下降的严重问题。在这里,我们使用相对刚性的环戊烷作为桥接基团来设计交联剂CPTA,实现了在环境条件下几乎无损的高分辨率量子点直接光刻。交联剂设计的关键是引入刚性桥接基团,提高LUMO能级,提供更强的能量屏障,以防止QD电子被捕获或进行非辐射重组,从而保持其PL和EL特性。制备了高效、高分辨率的RGB线阵列和点阵列,其像素尺寸低至1 μm,分辨率高达6350 PPI。图样RGB量子点薄膜,特别是红色量子点,保持了其光学和光电子特性,图样红色量子点达到了21%的峰值外量子效率(EQE)和~180,000 cd m(⁻²)的最大亮度(Lmax),与原始器件相匹配。这些结果强调了光交联设计对于无损量子点图形化的重要性,为图形化QLED技术的先进显示应用铺平了道路。
Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays
Recently, colloidal quantum dots (QDs) with high luminescent efficiency and tunable colors have become ideal materials for next-generation display devices. Direct photolithography is a powerful tool for patterning QD devices, but it faces the serious issue of degradation in the photophysical properties of the patterned QDs. Here, we use relatively rigid cyclopentane as a bridging group to design the crosslinker CPTA, achieving high-resolution direct photolithography of QDs with nearly nondestructive under ambient conditions. The key to the crosslinker design is the introduction of a rigid bridging group that elevates the LUMO level, providing a stronger energy barrier to prevent QD electrons from being trapped or undergoing non-radiative recombination, thus preserving their PL and EL properties. The efficient and high-resolution RGB line and dot arrays were fabricated with pixel sizes down to 1 μm and a resolution of up to 6350 PPI. The patterned RGB QD films, especially red QDs, maintained their optical and optoelectronic properties, with patterned red QLEDs achieving peak external quantum efficiency (EQE) of 21% and a maximum luminance (Lmax) of ~180,000 cd m⁻², matching pristine devices. These results highlight the importance of photo-crosslinker design for nondestructive QDs patterning, paving the way for advanced display applications in patterned QLED technology.