利用VO2/MoS2用于光通信频率的动态可调谐等离子体双带超材料吸收器

IF 2.3 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Masoud Hasankhani, Hamid Vahed, Mohammad Bemani
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引用次数: 0

摘要

本文介绍了一种基于二维二硫化钼(MoS2)和二氧化钒(VO2)谐振腔组合模式的可调谐超材料吸收器的设计和分析。吸收器结构设计简单,包括一个硅阵列,上面放置二硫化钼和钒的图案。利用调节MoS2载流子浓度和VO2相变特性的能力,吸收剂可以通过温度和电压设置对其光学特性进行双重控制。这种设计提供了动态控制吸收器谐振频率的可能性。吸收结构在1375.8 nm处的吸收率为99.3%,在1550.9 nm处的吸收率为94.3%。通过调整吸收剂结构参数,在1545.6 nm和1743 nm处的吸收峰分别达到99.4%和95.4%。MoS2和钒的可调性允许精确调谐吸收峰位置,并使结构适用于需要精确波长放置的传感器,探测器,光学滤波器和电信设备等应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Dynamically Tunable Plasmonic Dual-Band Metamaterial Absorber Utilising VO2/MoS2 for Optical Communication Frequencies

Dynamically Tunable Plasmonic Dual-Band Metamaterial Absorber Utilising VO2/MoS2 for Optical Communication Frequencies

This paper presents the design and analysis of a tunable metamaterial absorber based on the combination pattern of two-dimensional molybdenum disulfide (MoS2) and vanadium dioxide (VO2) resonator. The design of the absorber structure is simple and includes an array of silicon on which the pattern of MoS2 and vanadium is placed. By using the ability to adjust the MoS2 carrier concentration and VO2 phase transition properties, the absorber has dual control over its optical properties through temperature and voltage settings. This design provides the possibility of dynamic control of the resonance frequencies of the absorber. The absorber structure shows 99.3% absorption at 1375.8 nm and 94.3% at 1550.9 nm. By adjusting the parameters of the absorber structure, the absorption peak at wavelengths 1545.6 and 1743 nm reached 99.4% and 95.4%, respectively. The tunability of MoS2 and vanadium allows precise tuning of absorption peak locations and makes the structure suitable for applications such as sensors, detectors, optical filters and telecommunication devices that require precise wavelength placement.

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来源期刊
Iet Optoelectronics
Iet Optoelectronics 工程技术-电信学
CiteScore
4.50
自引率
0.00%
发文量
26
审稿时长
6 months
期刊介绍: IET Optoelectronics publishes state of the art research papers in the field of optoelectronics and photonics. The topics that are covered by the journal include optical and optoelectronic materials, nanophotonics, metamaterials and photonic crystals, light sources (e.g. LEDs, lasers and devices for lighting), optical modulation and multiplexing, optical fibres, cables and connectors, optical amplifiers, photodetectors and optical receivers, photonic integrated circuits, photonic systems, optical signal processing and holography and displays. Most of the papers published describe original research from universities and industrial and government laboratories. However correspondence suggesting review papers and tutorials is welcomed, as are suggestions for special issues. IET Optoelectronics covers but is not limited to the following topics: Optical and optoelectronic materials Light sources, including LEDs, lasers and devices for lighting Optical modulation and multiplexing Optical fibres, cables and connectors Optical amplifiers Photodetectors and optical receivers Photonic integrated circuits Nanophotonics and photonic crystals Optical signal processing Holography Displays
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