Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET. Two enhanced structures, vertical gate structured double gate TFET and horizontal gate structured double gate TFET are presented in this work. Performance is improved by using a high-k material at the source and a low-κ material at the drain. According to simulations using SILVACO ATLAS, Horizontal gate structured double gate TFET is perfect for low power, high speed applications because it offers superior transconductance, frequency response, and $I_{\mathrm{ON}}/I_{\mathrm{OFF}}$ ratio. Despite having a higher threshold voltage, Vertical gate structured double gate TFET also enhances performance, demonstrating the benefits of hetero dielectric engineering.