Anqi Qiang, Bingjie Ye, Leyang Qian, Huazhen Sun, Xiumei Zhang, Yushen Liu, Irina N. Parkhomenko, Fadei F. Komarov, Xinyi Shan, Yu Liu, Guofeng Yang
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Solar-blind ultraviolet β -Ga2O3 phototransistor for logic and secure optical communication applications
This work presents the fabrication of a high-performance solar-blind phototransistor based on a β-Ga2O3 thin film with a ring-shaped gate electrode, featuring a high-κ Al2O3 gate dielectric layer. Under 255 nm ultraviolet (UV) illumination, the device exhibits a high specific detectivity (D*) of 5.26 × 1014 Jones, a photo-to-dark current ratio of 7.11 × 105, a responsivity (R) of 4.01 A/W, and a UV-to-visible rejection ratio of 6 × 102. In addition, by using the gate voltage and solar-blind UV light as inputs and adjusting the source–drain voltage, switchable Not OR and Not AND (NAND) logic functions are achieved, with the source–drain current as the output. Based on the NAND logic operation, the gate voltage serves as a key to encrypt input signals, enabling secure optical communication. These results provide an appropriate approach for implementing secure optical communication based on Ga2O3 phototransistors.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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