Synthesis of ultralong, horizontally aligned VO2 nanowires for stable multi-level resistive switching

Vanadium dioxide (VO₂) is a transition metal oxide renowned for its distinctive metal-to-insulator transition that occurs in the vicinity of room temperature. Among various VO₂ nanomaterials, one-dimensional VO₂ nanowires have garnered a significant attention due to their potential for multi-level resistive switching. However, conventional routes for preparing VO₂ nanowires have been encountered by the limited length of wire, random orientation, and aggregation, which hinder their integration into VO₂-based device applications. In this study, we introduce a chemical vapor deposition approach to synthesize ultralong (∼600 μm), horizontally aligned single-crystalline VO₂ nanowires on x-cut quartz substrates. The synthesized nanowires represented four distinct resistance states over 100 switching cycles, providing an opportunity for highly efficient data processing. Our study prescribes the strategy for extensive device applications using the phase transition properties of single crystal VO₂ nanowires.