{"title":"带状晶体管","authors":"Katharina Zeissler","doi":"10.1038/s41928-025-01425-y","DOIUrl":null,"url":null,"abstract":"<p>The researchers — who are based at the Intel Foundry in Oregon, USA — developed a 180 nm cell height library for high-performance applications and a 160 nm cell height library for low-power applications. The contact resistance and device capacitance were reduced by integrating Backside PowerVia (Intel’s backside power delivery technology) and optimizing the transistor front side. Extreme-ultraviolet direct print patterning was used to reduce the total mask count.</p><p>Fischer and colleagues show that Intel 18A can perform better than previous technology based on fin field-effect transistors, Intel 3, with a frequency improvement of 18% and a power decrease of 38% at an iso-power of 0.75 V (and 25% and 36%, respectively, at 1.1 V). The technology also provides a 30% improvement in density scaling, with a bitcell area of 0.021 mm<sup>2</sup> for high-density cells and 0.023 mm<sup>2</sup> for high-current cells.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"115 1","pages":""},"PeriodicalIF":40.9000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ribbon transistors that scale\",\"authors\":\"Katharina Zeissler\",\"doi\":\"10.1038/s41928-025-01425-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The researchers — who are based at the Intel Foundry in Oregon, USA — developed a 180 nm cell height library for high-performance applications and a 160 nm cell height library for low-power applications. The contact resistance and device capacitance were reduced by integrating Backside PowerVia (Intel’s backside power delivery technology) and optimizing the transistor front side. Extreme-ultraviolet direct print patterning was used to reduce the total mask count.</p><p>Fischer and colleagues show that Intel 18A can perform better than previous technology based on fin field-effect transistors, Intel 3, with a frequency improvement of 18% and a power decrease of 38% at an iso-power of 0.75 V (and 25% and 36%, respectively, at 1.1 V). The technology also provides a 30% improvement in density scaling, with a bitcell area of 0.021 mm<sup>2</sup> for high-density cells and 0.023 mm<sup>2</sup> for high-current cells.</p>\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":\"115 1\",\"pages\":\"\"},\"PeriodicalIF\":40.9000,\"publicationDate\":\"2025-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1038/s41928-025-01425-y\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41928-025-01425-y","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The researchers — who are based at the Intel Foundry in Oregon, USA — developed a 180 nm cell height library for high-performance applications and a 160 nm cell height library for low-power applications. The contact resistance and device capacitance were reduced by integrating Backside PowerVia (Intel’s backside power delivery technology) and optimizing the transistor front side. Extreme-ultraviolet direct print patterning was used to reduce the total mask count.
Fischer and colleagues show that Intel 18A can perform better than previous technology based on fin field-effect transistors, Intel 3, with a frequency improvement of 18% and a power decrease of 38% at an iso-power of 0.75 V (and 25% and 36%, respectively, at 1.1 V). The technology also provides a 30% improvement in density scaling, with a bitcell area of 0.021 mm2 for high-density cells and 0.023 mm2 for high-current cells.
期刊介绍：
Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research.
The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society.
Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting.
In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
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