优化的纳秒激光切割SiC晶圆：一种模拟驱动的方法（硕士论文）。抛光工艺。14/2025)

IF 6.4 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Materials Technologies Pub Date : 2025-07-21 DOI:10.1002/admt.202570075

Dileep Karnam, Yu-Lung Lo

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引用次数: 0

摘要

文章编号2401652，Yu-Lung Lo和Dileep Karnam展示了仿真建模和人工神经网络的成功集成，以优化纳秒级SiC激光加工。该模型以最少的数据准确预测关键输出，减少了对试错的依赖。最佳切割实现了高功率和低速度，产生高纵横比和光滑的表面。等离子体光谱和能量色散x射线光谱证实在热影响区内形成了易于去除的SiC再沉积。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Optimized Nanosecond Laser Cutting of SiC Wafers: A Simulation-Driven Approach (Adv. Mater. Technol. 14/2025)

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Optimized Nanosecond Laser Cutting of SiC Wafers: A Simulation-Driven Approach (Adv. Mater. Technol. 14/2025)

SiC Wafers

In article number 2401652, Yu-Lung Lo and Dileep Karnam demonstrate the successful integration of simulation modeling and artificial neural networks to optimize nanosecond laser machining of SiC. The model accurately predicts key outputs with minimal data, reducing reliance on trial-and-error. Optimal cuts are achieved with high power and low speed, producing high aspect ratios and smooth surfaces. Plasma spectroscopy and energy-dispersive X-ray spectroscopy confirm the formation of easily removable SiC redeposits in the HAZ.

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来源期刊

Advanced Materials Technologies Materials Science-General Materials Science

CiteScore

10.20

自引率

4.40%

发文量

566

期刊介绍： Advanced Materials Technologies Advanced Materials Technologies is the new home for all technology-related materials applications research, with particular focus on advanced device design, fabrication and integration, as well as new technologies based on novel materials. It bridges the gap between fundamental laboratory research and industry.