Tanshia Tahreen Tanisha, Orchi Hassan and Md. Kawsar Alam
{"title":"掺杂诱导的单层WS2忆阻器性能优化:降低可变性和接触电阻†","authors":"Tanshia Tahreen Tanisha, Orchi Hassan and Md. Kawsar Alam","doi":"10.1039/D5RA02473K","DOIUrl":null,"url":null,"abstract":"<p >The memristor is a cornerstone for developing novel non-volatile memory devices that enable brain-like efficient processing and storage capabilities. Two-dimensional transition metal dichalcogenide (TMDC)-based memristors are gaining increasing attention due to the advantages they present over their bulk counterparts. In this work, we employed first-principles calculations to demonstrate that dopants play a significant role in reducing the cycle-to-cycle variability and in lowering the contact resistance in monolayer WS<small><sub>2</sub></small>-based memristor. The possibility of reduced cycle-to-cycle variability is reflected by the attractive nature of the calculated interaction energy between dopant metal atoms and a sulphur monovacancy in the WS<small><sub>2</sub></small> monolayer. The potential for reduced contact resistance is evident from the reduced tunneling barrier heights and increased tunneling probabilities at the electrode/WS<small><sub>2</sub></small> interface upon doping. Additionally, extra states are found to appear in the density of states upon doping, which can prove useful for adjusting the conductance of a doped WS<small><sub>2</sub></small>-based memristor as required. Finally, the obtained features are used to outline dopant selection criteria based on the valence electron configuration of dopants. The obtained characteristics and outlined criteria can serve as guidelines for the future design of optimized WS<small><sub>2</sub></small>-based memristive devices, possessing lower contact resistance and reduced variation in device performance.</p>","PeriodicalId":102,"journal":{"name":"RSC Advances","volume":" 32","pages":" 26052-26064"},"PeriodicalIF":4.6000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/ra/d5ra02473k?page=search","citationCount":"0","resultStr":"{\"title\":\"Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance†\",\"authors\":\"Tanshia Tahreen Tanisha, Orchi Hassan and Md. Kawsar Alam\",\"doi\":\"10.1039/D5RA02473K\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The memristor is a cornerstone for developing novel non-volatile memory devices that enable brain-like efficient processing and storage capabilities. Two-dimensional transition metal dichalcogenide (TMDC)-based memristors are gaining increasing attention due to the advantages they present over their bulk counterparts. In this work, we employed first-principles calculations to demonstrate that dopants play a significant role in reducing the cycle-to-cycle variability and in lowering the contact resistance in monolayer WS<small><sub>2</sub></small>-based memristor. The possibility of reduced cycle-to-cycle variability is reflected by the attractive nature of the calculated interaction energy between dopant metal atoms and a sulphur monovacancy in the WS<small><sub>2</sub></small> monolayer. The potential for reduced contact resistance is evident from the reduced tunneling barrier heights and increased tunneling probabilities at the electrode/WS<small><sub>2</sub></small> interface upon doping. Additionally, extra states are found to appear in the density of states upon doping, which can prove useful for adjusting the conductance of a doped WS<small><sub>2</sub></small>-based memristor as required. Finally, the obtained features are used to outline dopant selection criteria based on the valence electron configuration of dopants. The obtained characteristics and outlined criteria can serve as guidelines for the future design of optimized WS<small><sub>2</sub></small>-based memristive devices, possessing lower contact resistance and reduced variation in device performance.</p>\",\"PeriodicalId\":102,\"journal\":{\"name\":\"RSC Advances\",\"volume\":\" 32\",\"pages\":\" 26052-26064\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://pubs.rsc.org/en/content/articlepdf/2025/ra/d5ra02473k?page=search\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RSC Advances\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/ra/d5ra02473k\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSC Advances","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/ra/d5ra02473k","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance†
The memristor is a cornerstone for developing novel non-volatile memory devices that enable brain-like efficient processing and storage capabilities. Two-dimensional transition metal dichalcogenide (TMDC)-based memristors are gaining increasing attention due to the advantages they present over their bulk counterparts. In this work, we employed first-principles calculations to demonstrate that dopants play a significant role in reducing the cycle-to-cycle variability and in lowering the contact resistance in monolayer WS2-based memristor. The possibility of reduced cycle-to-cycle variability is reflected by the attractive nature of the calculated interaction energy between dopant metal atoms and a sulphur monovacancy in the WS2 monolayer. The potential for reduced contact resistance is evident from the reduced tunneling barrier heights and increased tunneling probabilities at the electrode/WS2 interface upon doping. Additionally, extra states are found to appear in the density of states upon doping, which can prove useful for adjusting the conductance of a doped WS2-based memristor as required. Finally, the obtained features are used to outline dopant selection criteria based on the valence electron configuration of dopants. The obtained characteristics and outlined criteria can serve as guidelines for the future design of optimized WS2-based memristive devices, possessing lower contact resistance and reduced variation in device performance.
期刊介绍:
An international, peer-reviewed journal covering all of the chemical sciences, including multidisciplinary and emerging areas. RSC Advances is a gold open access journal allowing researchers free access to research articles, and offering an affordable open access publishing option for authors around the world.