掺杂诱导的单层WS2忆阻器性能优化:降低可变性和接触电阻†

IF 4.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
RSC Advances Pub Date : 2025-07-22 DOI:10.1039/D5RA02473K
Tanshia Tahreen Tanisha, Orchi Hassan and Md. Kawsar Alam
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引用次数: 0

摘要

忆阻器是开发新型非易失性存储设备的基石,可以实现类似大脑的高效处理和存储能力。基于二维过渡金属二硫化物(TMDC)的记忆电阻器由于其相对于体积电阻器的优势而越来越受到关注。在这项工作中,我们采用第一性原理计算来证明掺杂剂在降低基于ws2的单层记忆电阻器的周期变异性和降低接触电阻方面发挥了重要作用。通过计算的掺杂金属原子与WS2单层中硫单空位之间的相互作用能的吸引力,可以反映出循环间变异性降低的可能性。在掺杂后,电极/WS2界面的隧道势垒高度降低,隧道可能性增加,可见接触电阻降低的潜力。此外,发现掺杂后的态密度中出现了额外的态,这可以证明对根据需要调整掺杂ws2基忆阻器的电导是有用的。最后,利用得到的特征来概述基于掺杂剂价电子组态的掺杂剂选择准则。所获得的特性和概述的标准可以作为未来设计优化的基于ws2的忆阻器件的指导方针,具有更低的接触电阻和更小的器件性能变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance†

Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance†

The memristor is a cornerstone for developing novel non-volatile memory devices that enable brain-like efficient processing and storage capabilities. Two-dimensional transition metal dichalcogenide (TMDC)-based memristors are gaining increasing attention due to the advantages they present over their bulk counterparts. In this work, we employed first-principles calculations to demonstrate that dopants play a significant role in reducing the cycle-to-cycle variability and in lowering the contact resistance in monolayer WS2-based memristor. The possibility of reduced cycle-to-cycle variability is reflected by the attractive nature of the calculated interaction energy between dopant metal atoms and a sulphur monovacancy in the WS2 monolayer. The potential for reduced contact resistance is evident from the reduced tunneling barrier heights and increased tunneling probabilities at the electrode/WS2 interface upon doping. Additionally, extra states are found to appear in the density of states upon doping, which can prove useful for adjusting the conductance of a doped WS2-based memristor as required. Finally, the obtained features are used to outline dopant selection criteria based on the valence electron configuration of dopants. The obtained characteristics and outlined criteria can serve as guidelines for the future design of optimized WS2-based memristive devices, possessing lower contact resistance and reduced variation in device performance.

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来源期刊
RSC Advances
RSC Advances chemical sciences-
CiteScore
7.50
自引率
2.60%
发文量
3116
审稿时长
1.6 months
期刊介绍: An international, peer-reviewed journal covering all of the chemical sciences, including multidisciplinary and emerging areas. RSC Advances is a gold open access journal allowing researchers free access to research articles, and offering an affordable open access publishing option for authors around the world.
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