{"title":"空间x射线成像大矩阵读出asic中带子环路补偿的像素级低差稳压器设计","authors":"Xiaoyu Wu;Jingsi Cheng;Yaoxing Dou;Ting Lu;Wu Gao","doi":"10.1109/TNS.2025.3577357","DOIUrl":null,"url":null,"abstract":"In energy-resolved X-ray imaging, non-ideal factors impact the application-specific integrated circuits (ASICs) for pixel readout. Integrating a low-dropout (LDO) regulator within the pixel array helps to improve consistency, but the design of pixel-level LDOs faces significant challenges under stringent power, stability, and area constraints. This article proposes a novel pixel-level LDO architecture employing sub-loop (SL) compensation to simultaneously enhance stability and transient response characteristics. The SL structure generates a left-half-plane (LHP) zero to cancel the secondary pole and is driven directly by the first stage of the error amplifier (EA) without requiring additional operational amplifiers. This approach achieves a <inline-formula> <tex-math>$3\\times $ </tex-math></inline-formula> reduction in compensation capacitance while maintaining a phase margin (PM) exceeding 60° across all load conditions. Furthermore, we introduce for the first time an LDO-based calibration method to mitigate the inter-pixel gain inconsistency caused by supply and ground voltage drops and manufacturing mismatches. A prototype chip has been designed and fabricated using a 130-nm CMOS process. The LDO occupies only <inline-formula> <tex-math>$1500~\\mu $ </tex-math></inline-formula>m2 of die area while consuming a quiescent current of <inline-formula> <tex-math>$26~\\mu $ </tex-math></inline-formula>A. When deployed in super-pixel constructions to validate the calibration scheme, the measured standard deviations of gain variation improved from 0.25 (uncorrected) to 0.08 mV/fC (corrected).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2245-2253"},"PeriodicalIF":1.9000,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a Pixel-Level Low-Dropout Regulator With Sub-Loop Compensation in Large Matrix Readout ASICs for Space X-Ray Imaging\",\"authors\":\"Xiaoyu Wu;Jingsi Cheng;Yaoxing Dou;Ting Lu;Wu Gao\",\"doi\":\"10.1109/TNS.2025.3577357\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In energy-resolved X-ray imaging, non-ideal factors impact the application-specific integrated circuits (ASICs) for pixel readout. Integrating a low-dropout (LDO) regulator within the pixel array helps to improve consistency, but the design of pixel-level LDOs faces significant challenges under stringent power, stability, and area constraints. This article proposes a novel pixel-level LDO architecture employing sub-loop (SL) compensation to simultaneously enhance stability and transient response characteristics. The SL structure generates a left-half-plane (LHP) zero to cancel the secondary pole and is driven directly by the first stage of the error amplifier (EA) without requiring additional operational amplifiers. This approach achieves a <inline-formula> <tex-math>$3\\\\times $ </tex-math></inline-formula> reduction in compensation capacitance while maintaining a phase margin (PM) exceeding 60° across all load conditions. Furthermore, we introduce for the first time an LDO-based calibration method to mitigate the inter-pixel gain inconsistency caused by supply and ground voltage drops and manufacturing mismatches. A prototype chip has been designed and fabricated using a 130-nm CMOS process. The LDO occupies only <inline-formula> <tex-math>$1500~\\\\mu $ </tex-math></inline-formula>m2 of die area while consuming a quiescent current of <inline-formula> <tex-math>$26~\\\\mu $ </tex-math></inline-formula>A. When deployed in super-pixel constructions to validate the calibration scheme, the measured standard deviations of gain variation improved from 0.25 (uncorrected) to 0.08 mV/fC (corrected).\",\"PeriodicalId\":13406,\"journal\":{\"name\":\"IEEE Transactions on Nuclear Science\",\"volume\":\"72 7\",\"pages\":\"2245-2253\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nuclear Science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11027160/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11027160/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design of a Pixel-Level Low-Dropout Regulator With Sub-Loop Compensation in Large Matrix Readout ASICs for Space X-Ray Imaging
In energy-resolved X-ray imaging, non-ideal factors impact the application-specific integrated circuits (ASICs) for pixel readout. Integrating a low-dropout (LDO) regulator within the pixel array helps to improve consistency, but the design of pixel-level LDOs faces significant challenges under stringent power, stability, and area constraints. This article proposes a novel pixel-level LDO architecture employing sub-loop (SL) compensation to simultaneously enhance stability and transient response characteristics. The SL structure generates a left-half-plane (LHP) zero to cancel the secondary pole and is driven directly by the first stage of the error amplifier (EA) without requiring additional operational amplifiers. This approach achieves a $3\times $ reduction in compensation capacitance while maintaining a phase margin (PM) exceeding 60° across all load conditions. Furthermore, we introduce for the first time an LDO-based calibration method to mitigate the inter-pixel gain inconsistency caused by supply and ground voltage drops and manufacturing mismatches. A prototype chip has been designed and fabricated using a 130-nm CMOS process. The LDO occupies only $1500~\mu $ m2 of die area while consuming a quiescent current of $26~\mu $ A. When deployed in super-pixel constructions to validate the calibration scheme, the measured standard deviations of gain variation improved from 0.25 (uncorrected) to 0.08 mV/fC (corrected).
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.