{"title":"在NiOx/HfO2−x: Al记忆电阻器中实现增强自整流的铁电极化驱动离子调制","authors":"Jiajing Wei, Yanfang He, Ying Yang, Huimin Zhang, Yufang Xie, Chenglin Zhang, Yuan Liu, Mingming Chen, Dawei Cao","doi":"10.1063/5.0273610","DOIUrl":null,"url":null,"abstract":"Self-rectifying memristors, which integrate diode-like behavior to suppress sneak currents in crossbar arrays, are promising for high-density neuromorphic systems. However, conventional designs often suffer from nonlinear weight updates and stochastic switching due to filamentary or Schottky-based mechanisms. Here, we present a NiOx/HfO2−x:Al bilayer memristor utilizing ferroelectric polarization to actively direct oxygen vacancy migration, thereby enhancing self-rectification. The polarization-induced internal field drives oxygen vacancy migration and synergizes with oxygen ion migration to modulate the interface barrier, yielding ∼3.5× larger rectification ratio than a non-ferroelectric control device. This ferroelectric–ionic coupling also achieves highly linear analog conductance updates (R2 ≈ 0.99, nonlinearity factor α ≈ 0.02). Our work reveals a ferroelectric–ionotronic mechanism that enables deterministic memristor switching, contributing to the evolving framework of neuromorphic device physics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ferroelectric polarization-driven ionic modulation enabling enhanced self-rectification in NiOx/HfO2−x: Al memristors\",\"authors\":\"Jiajing Wei, Yanfang He, Ying Yang, Huimin Zhang, Yufang Xie, Chenglin Zhang, Yuan Liu, Mingming Chen, Dawei Cao\",\"doi\":\"10.1063/5.0273610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-rectifying memristors, which integrate diode-like behavior to suppress sneak currents in crossbar arrays, are promising for high-density neuromorphic systems. However, conventional designs often suffer from nonlinear weight updates and stochastic switching due to filamentary or Schottky-based mechanisms. Here, we present a NiOx/HfO2−x:Al bilayer memristor utilizing ferroelectric polarization to actively direct oxygen vacancy migration, thereby enhancing self-rectification. The polarization-induced internal field drives oxygen vacancy migration and synergizes with oxygen ion migration to modulate the interface barrier, yielding ∼3.5× larger rectification ratio than a non-ferroelectric control device. This ferroelectric–ionic coupling also achieves highly linear analog conductance updates (R2 ≈ 0.99, nonlinearity factor α ≈ 0.02). Our work reveals a ferroelectric–ionotronic mechanism that enables deterministic memristor switching, contributing to the evolving framework of neuromorphic device physics.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"25 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0273610\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0273610","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Ferroelectric polarization-driven ionic modulation enabling enhanced self-rectification in NiOx/HfO2−x: Al memristors
Self-rectifying memristors, which integrate diode-like behavior to suppress sneak currents in crossbar arrays, are promising for high-density neuromorphic systems. However, conventional designs often suffer from nonlinear weight updates and stochastic switching due to filamentary or Schottky-based mechanisms. Here, we present a NiOx/HfO2−x:Al bilayer memristor utilizing ferroelectric polarization to actively direct oxygen vacancy migration, thereby enhancing self-rectification. The polarization-induced internal field drives oxygen vacancy migration and synergizes with oxygen ion migration to modulate the interface barrier, yielding ∼3.5× larger rectification ratio than a non-ferroelectric control device. This ferroelectric–ionic coupling also achieves highly linear analog conductance updates (R2 ≈ 0.99, nonlinearity factor α ≈ 0.02). Our work reveals a ferroelectric–ionotronic mechanism that enables deterministic memristor switching, contributing to the evolving framework of neuromorphic device physics.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.