Curie–Weiss‐Type Magnetic Field Tuning of Resistive Switching and Artificial Synapse Behaviors in Semiconductor Memristor

Magnetic field (H) tuning of memristive characteristics is desirable since the H is a non‐invasive and non‐destructive means that can be remotely applied for wide applications. However, current studies mainly focus on the memristors based on magnetic materials in the ferromagnetic region or nonmagnetic materials, where the H only exerts a small influence on the strength of magnetization (M), resulting in slight tuning of the key memristive parameters such as the ROFF/RON ratio. Here, a novel strategy of H tuning is experimentally demonstrated in a memristor based on magnetic semiconductor Mn‐doped GeSe (GeMnSe, TC = 280 K) in the paramagnetic region, where the Curie–Weiss law governs and the M increases prominently with H. Notably, upon applying an H of 1000 Oe, a high ROFF/RON ratio of 106 and a low power consumption of ≈1.7 × 10−8 W, which are 103 higher and103 lower than those without applying H, respectively, can be achieved in the Ag/GeMnSe/Pt structured memristor. Moreover, the artificial synapse behaviors of the memristor are enhanced by the H. Detailed analysis shows that the H‐tuning mechanism is rooted in magnetic coupling effects originating from the H‐induced prominent M and internal magnetic field (B) in the GeMnSe layer due to the Curie–Weiss law.