{"title":"hBN/CrPS4异质结构中界面镜对称性破缺诱导螺旋相关光电流。","authors":"Shanqing Li, Xiuhua Xie*, Xueyan Cui, Binghui Li, Baiqiao Huang, Wei Chen, Yuwei Shan, Zhen Cheng, Jinluo Cheng, Shichen Su, Shuangpeng Wang, Jishan Liu* and Hongyu Chen*, ","doi":"10.1021/acsami.5c08396","DOIUrl":null,"url":null,"abstract":"<p >Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS<sub>4</sub> heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 30","pages":"43799–43807"},"PeriodicalIF":8.2000,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interfacial Mirror Symmetry Breaking Induced Helicity-Dependent Photocurrents in hBN/CrPS4 Heterostructure\",\"authors\":\"Shanqing Li, Xiuhua Xie*, Xueyan Cui, Binghui Li, Baiqiao Huang, Wei Chen, Yuwei Shan, Zhen Cheng, Jinluo Cheng, Shichen Su, Shuangpeng Wang, Jishan Liu* and Hongyu Chen*, \",\"doi\":\"10.1021/acsami.5c08396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS<sub>4</sub> heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 30\",\"pages\":\"43799–43807\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.5c08396\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.5c08396","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Interfacial Mirror Symmetry Breaking Induced Helicity-Dependent Photocurrents in hBN/CrPS4 Heterostructure
Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS4 heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.