Hollow silica coated CsPbBr3 quantum dots facilitate large-scale synthesis and application of anti-counterfeiting ink

Metal CsPbBr₃ quantum dots have rapidly become a research focus in the field of optoelectronics due to their excellent optoelectronic properties. However, CsPbBr₃ quantum dots are prone to lattice decomposition and fluorescence quenching under external environmental factors such as humidity, oxygen, temperature, and light, which limits their applications. In this work, a simple aqueous solution method was proposed to embed CsPbBr₃ quantum dots into hollow silica (H-SiO₂) microspheres. H-SiO₂ provides a large growth space for CsPbBr₃ quantum dots, which are firmly attached to the interior of the H-SiO₂ shell through physical effect. CsPbBr₃ quantum dots composite with H-SiO₂ exhibit stable luminescent properties under high temperature (140 °C), humidity (water), and long-term storage conditions. Finally, prepare it into anti-counterfeiting ink to broaden its applications in displays and commerce.