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拓扑化学氟化法制备氟化锶铈外延薄膜的晶体结构和氟离子电导率

IF 4.3 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Chemical Communications Pub Date : 2025-07-17 DOI:10.1039/d5cc00985e
Akira Chikamatsu, Ayuka Nakano, Miku Hagiwara, Dai Kutsuzawa, Erika Fukushi, Hiroyuki Oguchi, Fumihiko Uesugi, Tsukasa Katayama, Yasushi Hirose
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引用次数: 0

摘要

在不同的退火温度（Tf）下，用聚偏氟乙烯对钙钛矿SrCeO3外延薄膜进行了拓扑化学氟化，得到了Sr0.5Ce0.5F2.5外延薄膜；350°C，表现出氟离子电导率，活化能为0.61 eV。
本文章由计算机程序翻译，如有差异，请以英文原文为准。

Crystal structure and fluoride-ion conductivity of strontium cerium fluoride epitaxial films prepared by topochemical fluorination

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Crystal structure and fluoride-ion conductivity of strontium cerium fluoride epitaxial films prepared by topochemical fluorination
Topochemical fluorination of perovskite SrCeO3 epitaxial thin films using polyvinylidene difluoride was performed at different annealing temperatures (Tf) for 1 h. Fluorite Sr0.5Ce0.5F2.5 epitaxial thin films were obtained at Tf > 350 °C, which exhibited fluoride-ion conductivity with an activation energy of 0.61 eV.
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来源期刊
Chemical Communications
Chemical Communications 化学-化学综合
CiteScore
8.60
自引率
4.10%
发文量
2705
审稿时长
1.4 months
期刊介绍： ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.
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