InN纳米颗粒的结构和光学表征

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2025-07-15 DOI:10.1016/j.nimb.2025.165796

Radouane GRAINE , Rafik CHEMAM

{"title":"InN纳米颗粒的结构和光学表征","authors":"Radouane GRAINE , Rafik CHEMAM","doi":"10.1016/j.nimb.2025.165796","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, the formation of nanocrystals in a 206 nm thick layer of thermally grown SiO<sub>2</sub> on a Si < 111 > substrate was investigated in an average depth of approximately 100 nm. The nanocrystals were formed through sequential ion implantation of Indium and Nitrogen ions, with a high implantation dose of 5.2 × 10<sup>16</sup> ions/cm<sup>2</sup>, and multi-energy ion implantation to achieve flat concentration profiles of the implanted elements. Subsequent annealing treatments were carried out at 500 °C. This study provides insights into the formation of InN-related NCs in (SiO<sub>2</sub>) and their luminescence characteristics by ion implantation, highlighting the annealing effects on the resulting optical properties. The analysis of the samples was carried out using different techniques, such as RBS, TEM for structural analysis and Photoluminescence (PL) by lamp and laser at room temperature and low temperature. Photoluminescence measurements showed band gap energy at 1.50 eV is related to the InN compound.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"566 ","pages":"Article 165796"},"PeriodicalIF":1.4000,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and optical characterization of InN nanoparticles\",\"authors\":\"Radouane GRAINE , Rafik CHEMAM\",\"doi\":\"10.1016/j.nimb.2025.165796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this study, the formation of nanocrystals in a 206 nm thick layer of thermally grown SiO<sub>2</sub> on a Si < 111 > substrate was investigated in an average depth of approximately 100 nm. The nanocrystals were formed through sequential ion implantation of Indium and Nitrogen ions, with a high implantation dose of 5.2 × 10<sup>16</sup> ions/cm<sup>2</sup>, and multi-energy ion implantation to achieve flat concentration profiles of the implanted elements. Subsequent annealing treatments were carried out at 500 °C. This study provides insights into the formation of InN-related NCs in (SiO<sub>2</sub>) and their luminescence characteristics by ion implantation, highlighting the annealing effects on the resulting optical properties. The analysis of the samples was carried out using different techniques, such as RBS, TEM for structural analysis and Photoluminescence (PL) by lamp and laser at room temperature and low temperature. Photoluminescence measurements showed band gap energy at 1.50 eV is related to the InN compound.</div></div>\",\"PeriodicalId\":19380,\"journal\":{\"name\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"volume\":\"566 \",\"pages\":\"Article 165796\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0168583X25001867\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X25001867","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}

引用次数: 0

摘要

在本研究中，在Si <表面热生长206nm厚的SiO2层中形成纳米晶体；111比;衬底的平均深度约为100 nm。采用高注入剂量5.2 × 1016离子/cm2的铟、氮离子序次注入和多能离子注入形成纳米晶体，使注入元素的浓度分布呈平坦状态。随后在500℃下进行退火处理。本研究通过离子注入深入研究了（SiO2）中铟相关纳米粒子的形成及其发光特性，重点研究了退火对其光学性质的影响。采用不同的技术对样品进行分析，如RBS、TEM进行结构分析、室温和低温下的灯和激光光致发光（PL）。光致发光测量表明，1.50 eV的带隙能量与InN化合物有关。

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Structural and optical characterization of InN nanoparticles

In this study, the formation of nanocrystals in a 206 nm thick layer of thermally grown SiO₂ on a Si < 111 > substrate was investigated in an average depth of approximately 100 nm. The nanocrystals were formed through sequential ion implantation of Indium and Nitrogen ions, with a high implantation dose of 5.2 × 10¹⁶ ions/cm², and multi-energy ion implantation to achieve flat concentration profiles of the implanted elements. Subsequent annealing treatments were carried out at 500 °C. This study provides insights into the formation of InN-related NCs in (SiO₂) and their luminescence characteristics by ion implantation, highlighting the annealing effects on the resulting optical properties. The analysis of the samples was carried out using different techniques, such as RBS, TEM for structural analysis and Photoluminescence (PL) by lamp and laser at room temperature and low temperature. Photoluminescence measurements showed band gap energy at 1.50 eV is related to the InN compound.

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.