Ji-Sung Lee , Jun-Young Park , Jian Cheng Bi , Seonghyeon Park , Junwoo Kil , Kyo-Cheol Kang , Sangpil Hwang , Ji-Hyeon Kwon , Junbeom Song , Hyejung Lim , Byeong-Kwon Ju
{"title":"利用高折射率材料基光提取层提高蓝色热激活延迟荧光有机发光器件的效率","authors":"Ji-Sung Lee , Jun-Young Park , Jian Cheng Bi , Seonghyeon Park , Junwoo Kil , Kyo-Cheol Kang , Sangpil Hwang , Ji-Hyeon Kwon , Junbeom Song , Hyejung Lim , Byeong-Kwon Ju","doi":"10.1016/j.jlumin.2025.121399","DOIUrl":null,"url":null,"abstract":"<div><div>A high-refractive-index periodic hole structure based on silicon nitride (Si<sub>3</sub>N<sub>4</sub>) was incorporated into thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) to improve optical efficiency. Due to its high refractive index, Si<sub>3</sub>N<sub>4</sub> serves as an effective optical scattering medium, enhancing light extraction in OLEDs.</div><div>The high-refractive-index structure (HRS) was achieved through laser interference lithography (LIL), which defined a periodic pattern in a photo-resist (PR) layer. This patterned PR layer subsequently functioned as an etch mask, allowing direct replication of the nanostructures onto the underlying Si<sub>3</sub>N<sub>4</sub> layer. Compared to conventional patterning methods, LIL provides higher precision and faster processing, making it a cost-effective solution for large-area nanoscale fabrication with accurate structural control.</div><div>Key parameters affecting the LIL, development, and reactive-ion etching (RIE) processes were systematically investigated. These included the half-angle between interfering beams, exposure dosage, volume ratio of PR-to-thinner, development time, volume ratio of developer with deionized water, and etching duration—all of which impact the final structure.</div><div>To enhance light extraction efficiency at a wavelength of 480 nm, a finite-difference time-domain (FDTD) simulation was utilized to fine-tune the HRS dimensions. The resulting optimized HRS significantly enhanced device performance, increasing the external quantum efficiency (EQE) by 14.58 %, current efficiency by 37.48 %, and power efficiency by 38.37 %.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"286 ","pages":"Article 121399"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing efficiency of blue thermally activated delayed fluorescence organic light-emitting device using a high refractive index material-based light extraction layer\",\"authors\":\"Ji-Sung Lee , Jun-Young Park , Jian Cheng Bi , Seonghyeon Park , Junwoo Kil , Kyo-Cheol Kang , Sangpil Hwang , Ji-Hyeon Kwon , Junbeom Song , Hyejung Lim , Byeong-Kwon Ju\",\"doi\":\"10.1016/j.jlumin.2025.121399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>A high-refractive-index periodic hole structure based on silicon nitride (Si<sub>3</sub>N<sub>4</sub>) was incorporated into thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) to improve optical efficiency. Due to its high refractive index, Si<sub>3</sub>N<sub>4</sub> serves as an effective optical scattering medium, enhancing light extraction in OLEDs.</div><div>The high-refractive-index structure (HRS) was achieved through laser interference lithography (LIL), which defined a periodic pattern in a photo-resist (PR) layer. This patterned PR layer subsequently functioned as an etch mask, allowing direct replication of the nanostructures onto the underlying Si<sub>3</sub>N<sub>4</sub> layer. Compared to conventional patterning methods, LIL provides higher precision and faster processing, making it a cost-effective solution for large-area nanoscale fabrication with accurate structural control.</div><div>Key parameters affecting the LIL, development, and reactive-ion etching (RIE) processes were systematically investigated. These included the half-angle between interfering beams, exposure dosage, volume ratio of PR-to-thinner, development time, volume ratio of developer with deionized water, and etching duration—all of which impact the final structure.</div><div>To enhance light extraction efficiency at a wavelength of 480 nm, a finite-difference time-domain (FDTD) simulation was utilized to fine-tune the HRS dimensions. 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Enhancing efficiency of blue thermally activated delayed fluorescence organic light-emitting device using a high refractive index material-based light extraction layer
A high-refractive-index periodic hole structure based on silicon nitride (Si3N4) was incorporated into thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) to improve optical efficiency. Due to its high refractive index, Si3N4 serves as an effective optical scattering medium, enhancing light extraction in OLEDs.
The high-refractive-index structure (HRS) was achieved through laser interference lithography (LIL), which defined a periodic pattern in a photo-resist (PR) layer. This patterned PR layer subsequently functioned as an etch mask, allowing direct replication of the nanostructures onto the underlying Si3N4 layer. Compared to conventional patterning methods, LIL provides higher precision and faster processing, making it a cost-effective solution for large-area nanoscale fabrication with accurate structural control.
Key parameters affecting the LIL, development, and reactive-ion etching (RIE) processes were systematically investigated. These included the half-angle between interfering beams, exposure dosage, volume ratio of PR-to-thinner, development time, volume ratio of developer with deionized water, and etching duration—all of which impact the final structure.
To enhance light extraction efficiency at a wavelength of 480 nm, a finite-difference time-domain (FDTD) simulation was utilized to fine-tune the HRS dimensions. The resulting optimized HRS significantly enhanced device performance, increasing the external quantum efficiency (EQE) by 14.58 %, current efficiency by 37.48 %, and power efficiency by 38.37 %.
期刊介绍:
The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid.
We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.