F和N掺杂对PbPdO2薄膜结构、电输运和磁性能的影响

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Applied Surface Science Pub Date : 2025-07-11 DOI:10.1016/j.apsusc.2025.164050

Hai Jia , Wenti Guo , Liqiang Zeng , Quanlin Chen , Zhiqiang Huang , Zhiya Lin , Xiaohui Huang , Jian-Min Zhang , Zhigao Huang , Shaoming Ying

{"title":"F和N掺杂对PbPdO2薄膜结构、电输运和磁性能的影响","authors":"Hai Jia , Wenti Guo , Liqiang Zeng , Quanlin Chen , Zhiqiang Huang , Zhiya Lin , Xiaohui Huang , Jian-Min Zhang , Zhigao Huang , Shaoming Ying","doi":"10.1016/j.apsusc.2025.164050","DOIUrl":null,"url":null,"abstract":"<div><div>Single-phase F or N doped PbPdO2 thin films crystallizing in a body-centered orthorhombic structure were fabricated via pulsed laser deposition and high-temperature treatment. Structural analyses confirmed the coexistence of Pb vacancies and oxygen defects. The electrical properties of the films demonstrated currents and the temperature dependences of resistivity ρI (T). The current induced negative colossal electroresistance (CER) was observed in the F or N-doped PbPdO2 thin films. Similar to PbPdO2 films, F or N-doped PbPdO2 thin films are also ferromagnetic, and can significantly increase the magnetic moment of the films. Moreover, the origin of the magnetism can be attributed to the following: 1 μB contribution of O1− in the film; F and Nions substituted for oxygen on a lattice site and the F and N dopants in the interstitial sites can induce both distinct roles on the valence states of oxygen and Pd ion, which significantly alters the magnetic properties of F and N-doped PbPdO2. The results show that the enhanced magnetization of PbPdO2 thin films doped with F or N are mainly due to Pd(2−δ)+ induced by F and N and more O1− in the films. Finally, the experimental results are well verified by the first principles calculation results.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"711 ","pages":"Article 164050"},"PeriodicalIF":6.3000,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of F and N doping on structure, electrical transport and magnetic properties in PbPdO2 thin films\",\"authors\":\"Hai Jia , Wenti Guo , Liqiang Zeng , Quanlin Chen , Zhiqiang Huang , Zhiya Lin , Xiaohui Huang , Jian-Min Zhang , Zhigao Huang , Shaoming Ying\",\"doi\":\"10.1016/j.apsusc.2025.164050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Single-phase F or N doped PbPdO2 thin films crystallizing in a body-centered orthorhombic structure were fabricated via pulsed laser deposition and high-temperature treatment. Structural analyses confirmed the coexistence of Pb vacancies and oxygen defects. The electrical properties of the films demonstrated currents and the temperature dependences of resistivity ρI (T). The current induced negative colossal electroresistance (CER) was observed in the F or N-doped PbPdO2 thin films. Similar to PbPdO2 films, F or N-doped PbPdO2 thin films are also ferromagnetic, and can significantly increase the magnetic moment of the films. Moreover, the origin of the magnetism can be attributed to the following: 1 μB contribution of O1− in the film; F and Nions substituted for oxygen on a lattice site and the F and N dopants in the interstitial sites can induce both distinct roles on the valence states of oxygen and Pd ion, which significantly alters the magnetic properties of F and N-doped PbPdO2. The results show that the enhanced magnetization of PbPdO2 thin films doped with F or N are mainly due to Pd(2−δ)+ induced by F and N and more O1− in the films. Finally, the experimental results are well verified by the first principles calculation results.</div></div>\",\"PeriodicalId\":247,\"journal\":{\"name\":\"Applied Surface Science\",\"volume\":\"711 \",\"pages\":\"Article 164050\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2025-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Surface Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0169433225017659\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169433225017659","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

采用脉冲激光沉积和高温处理法制备了体心正交晶型掺杂F或N的PbPdO2单相薄膜。结构分析证实了铅空位和氧缺陷共存。薄膜的电学性能表现出电阻率ρI (T)与电流和温度的关系。在掺F或n的PbPdO2薄膜中观察到电流诱导的负巨电阻（CER）。与PbPdO2薄膜类似，F或n掺杂的PbPdO2薄膜也是铁磁性的，并且可以显著增加薄膜的磁矩。此外，磁性的来源可以归结为：薄膜中O1−的贡献1 μB；F和N离子在晶格位置取代氧，F和N在间隙位置的掺杂对氧和Pd离子的价态都有不同的作用，这显著改变了F和N掺杂的PbPdO2的磁性能。结果表明：掺杂F或N的PbPdO2薄膜磁化强度的增强主要是由于F和N诱导Pd(2−δ)+和薄膜中O1−的增多。最后，实验结果与第一性原理计算结果得到了很好的验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Effects of F and N doping on structure, electrical transport and magnetic properties in PbPdO2 thin films

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Effects of F and N doping on structure, electrical transport and magnetic properties in PbPdO2 thin films

Single-phase F or N doped PbPdO₂ thin films crystallizing in a body-centered orthorhombic structure were fabricated via pulsed laser deposition and high-temperature treatment. Structural analyses confirmed the coexistence of Pb vacancies and oxygen defects. The electrical properties of the films demonstrated currents and the temperature dependences of resistivity ρ_I (T). The current induced negative colossal electroresistance (CER) was observed in the F or N-doped PbPdO₂ thin films. Similar to PbPdO₂ films, F or N-doped PbPdO₂ thin films are also ferromagnetic, and can significantly increase the magnetic moment of the films. Moreover, the origin of the magnetism can be attributed to the following: 1 μB contribution of O¹⁻ in the film; F and N ions substituted for oxygen on a lattice site and the F and N dopants in the interstitial sites can induce both distinct roles on the valence states of oxygen and Pd ion, which significantly alters the magnetic properties of F and N-doped PbPdO₂. The results show that the enhanced magnetization of PbPdO₂ thin films doped with F or N are mainly due to Pd^(2−δ)+ induced by F and N and more O¹⁻ in the films. Finally, the experimental results are well verified by the first principles calculation results.

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.