高压诱导Kagome金属GdV6Sn6各向异性调制及能带结构重建

IF 6.2 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Rui Zhang , Kaiyun Chen , Shengnan Zhang , Jianfeng Li , Songrui Wei , Xiaofan Yang
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引用次数: 0

摘要

Kagome晶格中的几何挫折和独特的电子结构通常会产生各种量子物质基态。v基Kagome化合物,如AV3Sb5,在静水压力调制下表现出复杂的相图。在此,我们通过密度函数计算报告了另一种新型V-Kagome体系RV6Sn6的电子结构演变,压力从0到107 GPa变化。结果表明,GdV6Sn6的电子密度在高压下表现出明显的各向异性。具体来说,在V-Kagome平面上观察到来自van Hove奇点的电子结构不稳定性,而在M动量空间中,它仍然保持稳健,高达约40 GPa。在高压区(~ 107 GPa),新形成的鞍点接近并越过费米能级,增强了费米能级的态密度(DOS)。这可能导致压力诱导的超导性,伴随着电荷通道的形成。我们的发现对高压下GdV6Sn6的电子结构提供了重要的见解,为研究RV6Sn6化合物的V-Kagome物理提供了有价值的模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Anisotropy modulation and band structure reconstruction induced by high pressure in Kagome metal GdV6Sn6
The geometric frustrations and unique electronic structures in Kagome lattices normally give rise to various quantum matter ground states. V-based Kagome compounds, such as AV3Sb5, exhibit a complex phase diagram under hydrostatic pressure modulation. Herein, we report an electronic structure evolution in another novel V-Kagome system RV6Sn6, with pressures changing from 0 to 107 GPa, through density functional calculations. Our results reveal that the electronic density of GdV6Sn6 exhibits pronounced anisotropy under high pressures. Specifically, electronic structure instabilities stem from van Hove singularities are observed in the V-Kagome plane, while that remains robust up to approximately 40 GPa in the M momentum space. In the high-pressure regime (107 GPa), the newly formed saddle point approaches and crosses the Fermi level, enhancing the density of states (DOS) at the Fermi level. This potentially results in pressure-induced superconductivity, accompanied by the formation of charge channels. Our findings provide essential insights into the electronic structure of GdV6Sn6 under high pressures, offering a valuable model for investigating V-Kagome physics in RV6Sn6 compounds.
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CiteScore
3.90
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