射频磁控溅射制备BaTiO3在Ge（001）表面的成核和生长动力学

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-07-11 DOI:10.1063/5.0275009

Ruyuan Ma, Wentao Yan, Mingliang Zhao, Xiaofei Liu, Yuanmao Pu, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Qize Zhong, Yuan Dong, Ting Hu

{"title":"射频磁控溅射制备BaTiO3在Ge（001）表面的成核和生长动力学","authors":"Ruyuan Ma, Wentao Yan, Mingliang Zhao, Xiaofei Liu, Yuanmao Pu, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Qize Zhong, Yuan Dong, Ting Hu","doi":"10.1063/5.0275009","DOIUrl":null,"url":null,"abstract":"The integration of metal oxide films with conventional semiconductors like silicon (Si) and germanium (Ge) enables the introduction of functionalities in semiconductor devices. This work experimentally demonstrates the BaTiO3 (BTO) thin film with crystalline Amm2 structure grown directly on Ge(001) using RF magnetron sputtering. In addition, its nucleation and growth kinetics are analyzed in detail. A systematic investigation of the crystal structural, optical, and morphological properties of BTO grown under different chamber pressures is performed. This study presents a growth model related to 3D + 2D growth to improve the mobility of barium (Ba) and titanium (Ti) atoms, with a stoichiometric ratio of Ba:Ti approaching 1.1. Consequently, at a wavelength of 800 nm, the refractive index (n) of BTO was approximately 2.15, rivaling those grown by pulsed laser deposition in refractive index.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"92 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Distinct nucleation and growth kinetics of BaTiO3 on Ge (001) by RF magnetron sputtering\",\"authors\":\"Ruyuan Ma, Wentao Yan, Mingliang Zhao, Xiaofei Liu, Yuanmao Pu, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Qize Zhong, Yuan Dong, Ting Hu\",\"doi\":\"10.1063/5.0275009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The integration of metal oxide films with conventional semiconductors like silicon (Si) and germanium (Ge) enables the introduction of functionalities in semiconductor devices. This work experimentally demonstrates the BaTiO3 (BTO) thin film with crystalline Amm2 structure grown directly on Ge(001) using RF magnetron sputtering. In addition, its nucleation and growth kinetics are analyzed in detail. A systematic investigation of the crystal structural, optical, and morphological properties of BTO grown under different chamber pressures is performed. This study presents a growth model related to 3D + 2D growth to improve the mobility of barium (Ba) and titanium (Ti) atoms, with a stoichiometric ratio of Ba:Ti approaching 1.1. Consequently, at a wavelength of 800 nm, the refractive index (n) of BTO was approximately 2.15, rivaling those grown by pulsed laser deposition in refractive index.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"92 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0275009\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0275009","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

金属氧化物薄膜与传统半导体（如硅（Si）和锗（Ge））的集成使半导体器件的功能得以引入。实验证明了采用射频磁控溅射技术在Ge（001）上直接生长出具有结晶Amm2结构的BaTiO3 （BTO）薄膜。此外，还详细分析了其成核和生长动力学。系统地研究了在不同腔室压力下生长的BTO的晶体结构、光学和形态特性。本研究提出了一种与3D + 2D生长相关的生长模型，以提高钡（Ba）和钛（Ti）原子的迁移率，Ba:Ti的化学计量比接近1.1。因此，在800 nm波长处，BTO的折射率(n)约为2.15，与脉冲激光沉积生长的折射率相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Distinct nucleation and growth kinetics of BaTiO3 on Ge (001) by RF magnetron sputtering

The integration of metal oxide films with conventional semiconductors like silicon (Si) and germanium (Ge) enables the introduction of functionalities in semiconductor devices. This work experimentally demonstrates the BaTiO3 (BTO) thin film with crystalline Amm2 structure grown directly on Ge(001) using RF magnetron sputtering. In addition, its nucleation and growth kinetics are analyzed in detail. A systematic investigation of the crystal structural, optical, and morphological properties of BTO grown under different chamber pressures is performed. This study presents a growth model related to 3D + 2D growth to improve the mobility of barium (Ba) and titanium (Ti) atoms, with a stoichiometric ratio of Ba:Ti approaching 1.1. Consequently, at a wavelength of 800 nm, the refractive index (n) of BTO was approximately 2.15, rivaling those grown by pulsed laser deposition in refractive index.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.