{"title":"基于垂直堆叠MoS2/WSe2 n /p场效应晶体管的互补场效应晶体管的电二、三元可转换CMOS逆变器和逻辑门","authors":"Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang","doi":"10.1002/adfm.202510164","DOIUrl":null,"url":null,"abstract":"In this work, electrically binary and ternary reconfigurable complementary metal‐oxide‐semiconductor (T‐CMOS) inverter that achieves stable multivalued logic (MVL) is presented. The device is realized through vertical integration of chemical vapor deposition‐grown MoS<jats:sub>2</jats:sub> n‐channel and WSe<jats:sub>2</jats:sub> p‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in a complementary FETs (CFETs) configuration, combined with a gate‐tunable MoS₂ resistive element that enables a well‐defined intermediate logic state via constant‐current operation. The unique combination of vertically stacked 2D MOSFETs and an electrically tunable resistive element allows for precise control over the voltage transfer characteristic and dynamic switching between binary and ternary modes. Furthermore, these T‐CMOS inverters are integrated in large‐scale to demonstrate ternary logic gates, including NAND (NMIN) and NOR (NMAX), thereby validating the scalability and potential for compact and energy‐efficient MVL circuits.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"22 1","pages":""},"PeriodicalIF":18.5000,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors\",\"authors\":\"Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang\",\"doi\":\"10.1002/adfm.202510164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, electrically binary and ternary reconfigurable complementary metal‐oxide‐semiconductor (T‐CMOS) inverter that achieves stable multivalued logic (MVL) is presented. The device is realized through vertical integration of chemical vapor deposition‐grown MoS<jats:sub>2</jats:sub> n‐channel and WSe<jats:sub>2</jats:sub> p‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in a complementary FETs (CFETs) configuration, combined with a gate‐tunable MoS₂ resistive element that enables a well‐defined intermediate logic state via constant‐current operation. The unique combination of vertically stacked 2D MOSFETs and an electrically tunable resistive element allows for precise control over the voltage transfer characteristic and dynamic switching between binary and ternary modes. Furthermore, these T‐CMOS inverters are integrated in large‐scale to demonstrate ternary logic gates, including NAND (NMIN) and NOR (NMAX), thereby validating the scalability and potential for compact and energy‐efficient MVL circuits.\",\"PeriodicalId\":112,\"journal\":{\"name\":\"Advanced Functional Materials\",\"volume\":\"22 1\",\"pages\":\"\"},\"PeriodicalIF\":18.5000,\"publicationDate\":\"2025-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Functional Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/adfm.202510164\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adfm.202510164","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors
In this work, electrically binary and ternary reconfigurable complementary metal‐oxide‐semiconductor (T‐CMOS) inverter that achieves stable multivalued logic (MVL) is presented. The device is realized through vertical integration of chemical vapor deposition‐grown MoS2 n‐channel and WSe2 p‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in a complementary FETs (CFETs) configuration, combined with a gate‐tunable MoS₂ resistive element that enables a well‐defined intermediate logic state via constant‐current operation. The unique combination of vertically stacked 2D MOSFETs and an electrically tunable resistive element allows for precise control over the voltage transfer characteristic and dynamic switching between binary and ternary modes. Furthermore, these T‐CMOS inverters are integrated in large‐scale to demonstrate ternary logic gates, including NAND (NMIN) and NOR (NMAX), thereby validating the scalability and potential for compact and energy‐efficient MVL circuits.
期刊介绍:
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