{"title":"基于0.13 μm SiGe技术的203- 250ghz交错调谐放大器","authors":"Xin Zhang;Zhiheng Liu;Fanyi Meng","doi":"10.1109/LMWT.2025.3560671","DOIUrl":null,"url":null,"abstract":"An ultra-wideband four-stage 220GHz amplifier in a 0.13-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m SiGe BiCMOS technology is proposed in this letter. The cascode topology is deployed as a unit amplifier to provide sufficient power gain. To broaden the bandwidth, the staggered-tuning model for the cascode amplifier is studied, analyzed, and applied in the amplifier design. The fabricated circuit achieves a peak gain of 15.5 dB at 210GHz, a 3-dB bandwidth of 47GHz, an output <inline-formula> <tex-math>$P_{\\text {1 dB}}$ </tex-math></inline-formula> of −9.7 dBm at 220GHz. The amplifier occupies a compact area of 0.154 mm<sup>2</sup>. The dc power consumption is 20.4mW at 2.4 V supply voltage.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1049-1052"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 203-to-250GHz Staggered-Tuning Amplifier in 0.13-μm SiGe Technology\",\"authors\":\"Xin Zhang;Zhiheng Liu;Fanyi Meng\",\"doi\":\"10.1109/LMWT.2025.3560671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultra-wideband four-stage 220GHz amplifier in a 0.13-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m SiGe BiCMOS technology is proposed in this letter. The cascode topology is deployed as a unit amplifier to provide sufficient power gain. To broaden the bandwidth, the staggered-tuning model for the cascode amplifier is studied, analyzed, and applied in the amplifier design. The fabricated circuit achieves a peak gain of 15.5 dB at 210GHz, a 3-dB bandwidth of 47GHz, an output <inline-formula> <tex-math>$P_{\\\\text {1 dB}}$ </tex-math></inline-formula> of −9.7 dBm at 220GHz. The amplifier occupies a compact area of 0.154 mm<sup>2</sup>. The dc power consumption is 20.4mW at 2.4 V supply voltage.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 7\",\"pages\":\"1049-1052\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10979515/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10979515/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 203-to-250GHz Staggered-Tuning Amplifier in 0.13-μm SiGe Technology
An ultra-wideband four-stage 220GHz amplifier in a 0.13-$\mu $ m SiGe BiCMOS technology is proposed in this letter. The cascode topology is deployed as a unit amplifier to provide sufficient power gain. To broaden the bandwidth, the staggered-tuning model for the cascode amplifier is studied, analyzed, and applied in the amplifier design. The fabricated circuit achieves a peak gain of 15.5 dB at 210GHz, a 3-dB bandwidth of 47GHz, an output $P_{\text {1 dB}}$ of −9.7 dBm at 220GHz. The amplifier occupies a compact area of 0.154 mm2. The dc power consumption is 20.4mW at 2.4 V supply voltage.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
