Wentao Zhong;Ang Hu;Jingsong Cui;Qin Hu;Dongsheng Liu;Xuecheng Zou
{"title":"一种用于高密度并行接口的11pa /Hz 5gb /s无电感光接收机","authors":"Wentao Zhong;Ang Hu;Jingsong Cui;Qin Hu;Dongsheng Liu;Xuecheng Zou","doi":"10.1109/LMWT.2025.3553931","DOIUrl":null,"url":null,"abstract":"This letter presents a 5-Gb/s inductorless optical receiver (ORX) used for high-density parallel interface application. In order to reduce the active area of single channel and mitigate the magnetic coupling effect, the on-chip inductor is limit-used. By adopting a regulated cascode (RGC) transimpedance amplifier (TIA) and an on-chip low dropout (LDO) regulator, the high-frequency noise and off-chip noise are reduced. A limiting amplifier (LA) utilizing the second-order amplifier cells with active feedback is employed, which can perform peaking characteristics at high frequencies and increase the gain-bandwidth (GBW) product. Implemented in 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process, the ORX achieves a measured transimpedance gain of 74 dB <inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>, a −3-dB bandwidth of 3.65 GHz, and an average input-referred current noise density of 11 pA/<inline-formula> <tex-math>$\\sqrt {\\mathrm {Hz}} $ </tex-math></inline-formula>. The total area occupied by the ORX is 2.686 mm<sup>2</sup>, with a power consumption of 112.9 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1085-1088"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 11-pA/Hz 5-Gb/s Inductorless Optical Receiver for High-Density Parallel Interface Application\",\"authors\":\"Wentao Zhong;Ang Hu;Jingsong Cui;Qin Hu;Dongsheng Liu;Xuecheng Zou\",\"doi\":\"10.1109/LMWT.2025.3553931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a 5-Gb/s inductorless optical receiver (ORX) used for high-density parallel interface application. In order to reduce the active area of single channel and mitigate the magnetic coupling effect, the on-chip inductor is limit-used. By adopting a regulated cascode (RGC) transimpedance amplifier (TIA) and an on-chip low dropout (LDO) regulator, the high-frequency noise and off-chip noise are reduced. A limiting amplifier (LA) utilizing the second-order amplifier cells with active feedback is employed, which can perform peaking characteristics at high frequencies and increase the gain-bandwidth (GBW) product. Implemented in 0.18-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m CMOS process, the ORX achieves a measured transimpedance gain of 74 dB <inline-formula> <tex-math>$\\\\Omega $ </tex-math></inline-formula>, a −3-dB bandwidth of 3.65 GHz, and an average input-referred current noise density of 11 pA/<inline-formula> <tex-math>$\\\\sqrt {\\\\mathrm {Hz}} $ </tex-math></inline-formula>. The total area occupied by the ORX is 2.686 mm<sup>2</sup>, with a power consumption of 112.9 mW.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 7\",\"pages\":\"1085-1088\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10978883/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10978883/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了一种用于高密度并行接口应用的5gb /s无电感光接收器(ORX)。为了减小单通道的有源面积,减轻磁耦合效应,限制了片上电感的使用。通过采用可调级联码(RGC)跨阻放大器(TIA)和片上低差(LDO)稳压器,降低了高频噪声和片外噪声。采用带有源反馈的二阶放大器单元的限幅放大器(LA),可以在高频处实现峰值特性并提高增益带宽(GBW)积。ORX在0.18- $\mu $ m CMOS工艺中实现,测量的跨阻增益为74 dB $\Omega $, - 3 dB带宽为3.65 GHz,平均输入参考电流噪声密度为11 pA/ $\sqrt {\mathrm {Hz}} $。ORX的总占地面积为2.686 mm2,功耗为112.9 mW。
A 11-pA/Hz 5-Gb/s Inductorless Optical Receiver for High-Density Parallel Interface Application
This letter presents a 5-Gb/s inductorless optical receiver (ORX) used for high-density parallel interface application. In order to reduce the active area of single channel and mitigate the magnetic coupling effect, the on-chip inductor is limit-used. By adopting a regulated cascode (RGC) transimpedance amplifier (TIA) and an on-chip low dropout (LDO) regulator, the high-frequency noise and off-chip noise are reduced. A limiting amplifier (LA) utilizing the second-order amplifier cells with active feedback is employed, which can perform peaking characteristics at high frequencies and increase the gain-bandwidth (GBW) product. Implemented in 0.18-$\mu $ m CMOS process, the ORX achieves a measured transimpedance gain of 74 dB $\Omega $ , a −3-dB bandwidth of 3.65 GHz, and an average input-referred current noise density of 11 pA/$\sqrt {\mathrm {Hz}} $ . The total area occupied by the ORX is 2.686 mm2, with a power consumption of 112.9 mW.