基于过程不变伪电阻技术的196 ~ 254 ghz缝阵耦合探测器

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Qingfan Zeng;Yiming Yu;Jiacheng Ding;Peilin Lv;Huihua Liu;Yunqiu Wu;Cheng Wang;Qingsong Bai;Shang Ma;Jianhao Hu;Kai Kang
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引用次数: 0

摘要

本文介绍了一种紧凑的槽阵耦合太赫兹(THz)探测器,其基带响应率高达10 MV/W。太赫兹探测器的核心电路基于平方律探测原理,采用共源结构实现。为了减少工艺变化的影响,提出了一种新的伪电阻(PR)偏置方案来稳定基带带宽。采用槽阵耦合器从波导中提取太赫兹信号以满足测量要求。该探测器采用65纳米CMOS工艺制造,有效检测范围为196 ~ 254 GHz,带宽分数为25.8%。测量的响应度和噪声等效功率(NEP)分别为1.6 kV/W和39 pW/Hz0.5。配合级联基带放大器,最大基带响应度可达10 MV/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 196-to-254-GHz Slot-Array Coupled Detector Using Process-Invariant Pseudo Resistor Technique
This letter presents a compact slot-array coupled terahertz (THz) detector achieving a high baseband responsivity of 10 MV/W. The core circuit of the THz detector is based on the principle of square-law detection and realized by a common-source structure. In order to reduce the impact of process variation, a novel bias scheme for pseudo resistor (PR) is proposed to stabilize the baseband bandwidth. A slot-array coupler is employed to extract the THz signal from waveguide for measurement requirement. Fabricated in a 65-nm CMOS process, the proposed detector demonstrates effective detection from 196 to 254 GHz with 25.8% fractional bandwidth. The measured responsivity and noise equivalent power (NEP) are 1.6 kV/W and 39 pW/Hz0.5, respectively. Together with the cascaded baseband amplifier, the maximum baseband responsivity of 10 MV/W is achieved.
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