用于逻辑存储器和神经调节应用的通用双栅2D晶体管。

IF 12.1 2区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Small Pub Date : 2025-07-07 DOI:10.1002/smll.202503991
Advaita Ghosh,Lester Uy Vinzons,Adam Šlechta,Vilém Kledrowetz,Yen-Fu Lin,Shu-Ping Lin
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引用次数: 0

摘要

集成存储和处理功能的范德华异质结构器件已被探索以克服冯·诺依曼瓶颈。虽然大多数这些设备支持逻辑或神经形态功能,但很少有证明结合了记忆,逻辑和神经调节功能。在这项工作中,提出了一种具有访问区域的双栅极范德华异质结构浮栅场效应晶体管,利用二硫化钼作为通道,六方氮化硼作为绝缘和隧道层,石墨烯作为浮栅,在单个器件中无缝集成了存储,逻辑和神经形态功能。该晶体管具有强大的存储特性,包括大的存储窗口(133 V),优异的保持率(≈10,000 s)和高耐用性(bbb500周期)。利用其双栅极架构,该器件展示了可重构的双输入逻辑OR和NOT操作,具有可调谐的非逻辑增益。该装置还模拟了关键的突触可塑性机制,包括峰值振幅,峰值数量和峰值持续时间的依赖。值得注意的是,顶门作为一个调节神经元,其中正电压和负电压分别放大或抑制突触反应。通过在单个器件中集成记忆、逻辑和神经调节,这种范德华异质结构为内存逻辑和神经形态应用提供了一个通用的、节能的平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Versatile Dual-Gate 2D Transistor for Logic-in-Memory and Neuromodulation Applications.
Van der Waals heterostructure devices integrating memory and processing functions have been explored to overcome the von Neumann bottleneck. While most of these devices support logic or neuromorphic functionalities, few have demonstrated combined memory, logic, and neuromodulation capabilities. In this work, a dual-gate van der Waals heterostructure floating-gate field-effect transistor with access regions is presented, utilizing molybdenum disulfide as the channel, hexagonal boron nitride as the insulating and tunneling layers, and graphene as the floating gate, that seamlessly integrates memory, logic, and neuromorphic functions in a single device. The transistor exhibits robust memory characteristics, including a large memory window (133 V), excellent retention (≈10 000 s), and high endurance (>500 cycles). Leveraging its dual-gate architecture, the device demonstrates reconfigurable two-input logic OR and NOT operations, with tunable gain for NOT logic. The device also emulates key synaptic plasticity mechanisms, including spike-amplitude, spike-number, and spike-duration dependence. Notably, the top gate acts as a modulatory neuron, where positive and negative voltages amplify or suppress synaptic responses, respectively. By integrating memory, logic, and neuromodulation in a single device, this van der Waals heterostructure provides a versatile, energy-efficient platform for in-memory logic and neuromorphic applications.
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来源期刊
Small
Small 工程技术-材料科学:综合
CiteScore
17.70
自引率
3.80%
发文量
1830
审稿时长
2.1 months
期刊介绍: Small serves as an exceptional platform for both experimental and theoretical studies in fundamental and applied interdisciplinary research at the nano- and microscale. The journal offers a compelling mix of peer-reviewed Research Articles, Reviews, Perspectives, and Comments. With a remarkable 2022 Journal Impact Factor of 13.3 (Journal Citation Reports from Clarivate Analytics, 2023), Small remains among the top multidisciplinary journals, covering a wide range of topics at the interface of materials science, chemistry, physics, engineering, medicine, and biology. Small's readership includes biochemists, biologists, biomedical scientists, chemists, engineers, information technologists, materials scientists, physicists, and theoreticians alike.
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