用光管理箔改善钙钛矿发光二极管的光解耦和解决测量细节

IF 3.9 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Milan Kovačič, Marko Jošt, Janez Krč, Marko Topič
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引用次数: 0

摘要

制备了具有四层钙钛矿(PK)层厚度和可选微纹理光管理(LM)箔的近红外钙钛矿发光二极管(PeLEDs),以评估其对光脱耦效率的影响。与具有更薄或更厚PK层的器件相比,具有70 nm厚PK层的器件表现出最高的外部量子效率(EQE)。PK厚度影响整个薄膜堆叠,从而影响光的脱耦。LM箔显著改善了所有器件的光脱耦,其中最厚的PK层(160 nm)受益最多(增加60%),而最薄的PK层(40 nm)改善最少(30%)。测量的趋势与光学建模结果很好地吻合,进一步突出了样品支架设计和像素位置对结果的影响。理论优化的PK厚度表明独特的最优值的器件有或没有LM箔。对于集成LM箔的器件,模拟预测最佳PK厚度为80 nm, EQE为27%。相比之下,对于没有LM箔的器件,最佳PK厚度为60 nm对应的模拟EQE为17%。在所有情况下,LM箔都显著增强了底部发光pled的光耦合,同时强调了在薄膜层堆栈优化过程中包含LM箔的必要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Improving Light Outcoupling and Addressing Measurement Specifics in Perovskite Light-Emitting Diodes with Light Management Foils

Improving Light Outcoupling and Addressing Measurement Specifics in Perovskite Light-Emitting Diodes with Light Management Foils

Improving Light Outcoupling and Addressing Measurement Specifics in Perovskite Light-Emitting Diodes with Light Management Foils

Improving Light Outcoupling and Addressing Measurement Specifics in Perovskite Light-Emitting Diodes with Light Management Foils

Improving Light Outcoupling and Addressing Measurement Specifics in Perovskite Light-Emitting Diodes with Light Management Foils

Near-infrared perovskite light-emitting diodes (PeLEDs), with four perovskite (PK) layer thicknesses and optional micro-textured light management (LM) foil, are fabricated to evaluate their effects on light outcoupling efficiency. Devices with a 70 nm thick PK exhibit highest external quantum efficiencies (EQE), compared to those with thinner or thicker PK layers. The PK thickness influences the overall thin-film stack and, consequently, the light outcoupling. LM foils significantly improve light outcoupling across all devices, with the thickest PK layer (160 nm) benefiting the most (60% increase), while the thinnest (40 nm) sees the least improvement (30%). Measured trends align well with optical modeling results, further highlighting the impact of sample holder design and pixel position on results. Theoretical optimization of PK thickness indicates unique optimal values for devices with or without LM foils. For devices incorporating LM foils, simulations predict an optimal PK thickness of 80 nm and an EQE of 27%. In contrast, for devices without LM foils, the optimal PK thickness of 60 nm corresponds to simulated EQE of 17%. In all cases, LM foils significantly enhance light outcoupling from bottom-emitting PeLEDs while emphasizing the necessity to include LM foils in the thin-film layer stack optimization process.

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