使用效率超过33%的Cs2TiBr6/La2NiMnO6模拟无铅双吸收太阳能电池

IF 1.6 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sheikh Hasib Cheragee, Jannatul Afroj Akhi, Muhammad Masud Tarek, Mohammad Tahsin Alam, Mohammad Jahangir Alam
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引用次数: 0

摘要

尽管钙钛矿太阳能电池(PSCs)的效率有了显著的提高,但它们的工业化和商业化之路仍受到相当大的挑战的阻碍。一个主要的问题是与铅基钙钛矿有关的毒性,它也会迅速降解。为了缓解这些问题,研究人员正在研究无铅替代品。在这项研究中,我们开发了一种无铅PSC的器件结构,利用Cs2TiBr6和La2NiMnO6作为吸收剂。通过改变这些带隙值不同的层的厚度,我们在设计中实现了电流匹配,这是利用太阳电池电容模拟器(SCAPS-1D)与AM 1.5 g1太阳光谱进行的。优化后的器件结构包括FTO、SnO2、Cs2TiBr6、La2NiMnO6、GO和Au层。SCAPS-1D还用于评估缺陷密度、不同空穴传输层(HTLs)和工作温度对所提出的双吸收体太阳能电池(DASC)性能的影响。此外,还研究了背反射涂层和变化的太阳光谱如何影响所提出的结构。在300 K时,优化设计的功率转换效率(PCE)为33.38%,开路电压(Voc)为0.9158 V,短路电流密度(Jsc)为43.47 mA/cm2,填充系数(FF)为83.85%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Simulation of Lead-Free Double-Absorber Solar Cell Using Cs2TiBr6/La2NiMnO6 Over 33% Efficiency

Simulation of Lead-Free Double-Absorber Solar Cell Using Cs2TiBr6/La2NiMnO6 Over 33% Efficiency

Despite perovskite solar cells (PSCs) having seen significant improvements in efficiency, their path to industrialisation and commercialisation is hindered by considerable challenges. A major concern is the toxicity associated with lead-based perovskites, which also suffer from rapid degradation. To mitigate these issues, researchers are investigating lead-free alternatives. In this study, we developed a device structure for a lead-free PSC utilising Cs2TiBr6 and La2NiMnO6 as absorbers. By modifying the thickness of these layers with distinct bandgap values, we achieved current matching in the design, which was carried out utilising the solar cell capacitance simulator (SCAPS-1D) with the AM 1.5 G 1 sun light spectrum. The proposed optimised device structure includes layers of FTO, SnO2, Cs2TiBr6, La2NiMnO6, GO and Au. SCAPS-1D is also utilised to assess the impact of defect density, different hole transport layers (HTLs) and operating temperature on the performance of the proposed double-absorber solar cell (DASC). Additionally, it is also examined how the back-reflective coating and varying solar spectra affect the proposed structure. At 300 K, the optimised design achieved a power conversion efficiency (PCE) of 33.38%, an open circuit voltage (Voc) of 0.9158 V, a short-circuit current density (Jsc) of 43.47 mA/cm2 and a fill factor (FF) of 83.85%.

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来源期刊
Iet Optoelectronics
Iet Optoelectronics 工程技术-电信学
CiteScore
4.50
自引率
0.00%
发文量
26
审稿时长
6 months
期刊介绍: IET Optoelectronics publishes state of the art research papers in the field of optoelectronics and photonics. The topics that are covered by the journal include optical and optoelectronic materials, nanophotonics, metamaterials and photonic crystals, light sources (e.g. LEDs, lasers and devices for lighting), optical modulation and multiplexing, optical fibres, cables and connectors, optical amplifiers, photodetectors and optical receivers, photonic integrated circuits, photonic systems, optical signal processing and holography and displays. Most of the papers published describe original research from universities and industrial and government laboratories. However correspondence suggesting review papers and tutorials is welcomed, as are suggestions for special issues. IET Optoelectronics covers but is not limited to the following topics: Optical and optoelectronic materials Light sources, including LEDs, lasers and devices for lighting Optical modulation and multiplexing Optical fibres, cables and connectors Optical amplifiers Photodetectors and optical receivers Photonic integrated circuits Nanophotonics and photonic crystals Optical signal processing Holography Displays
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