内部极化场对S-H键最佳状态的电子释放（Adv. Mater. 26/2025）

IF 26.8 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Advanced Materials Pub Date : 2025-07-04 DOI:10.1002/adma.202570173

Hyunho Seok, Minjun Kim, Jinill Cho, Sihoon Son, Yonas Tsegaye Megra, Jinhyoung Lee, Myeong Gyun Nam, Keon-Woo Kim, Kubra Aydin, Seong Soo Yoo, Hyeonjeong Lee, Vinit K. Kanade, Muyoung Kim, Jihun Mun, Jin Kon Kim, Ji Won Suk, Hyeong-U Kim, Pil J. Yoo, Taesung Kim

{"title":"内部极化场对S-H键最佳状态的电子释放（Adv. Mater. 26/2025）","authors":"Hyunho Seok, Minjun Kim, Jinill Cho, Sihoon Son, Yonas Tsegaye Megra, Jinhyoung Lee, Myeong Gyun Nam, Keon-Woo Kim, Kubra Aydin, Seong Soo Yoo, Hyeonjeong Lee, Vinit K. Kanade, Muyoung Kim, Jihun Mun, Jin Kon Kim, Ji Won Suk, Hyeong-U Kim, Pil J. Yoo, Taesung Kim","doi":"10.1002/adma.202570173","DOIUrl":null,"url":null,"abstract":"Electron Release via Internal Polarization FieldsThe internal polarization field at the W–graphene heterointerface induces sulfur vacancy formation under ion bombardment, modulating the electronic structure via excess electron transfer. This enhances valence state filling of W and S atoms. This study highlights the relationship between the WS2 basal plane's electronic structure and electrocatalytic activity, focusing on optimizing S–H bonding. More details can be found in article number 2411211 by Hyeong-U Kim, Pil J. Yoo, Taesung Kim, and co-workers.\n\n <figure>\n <div><picture>\n <source></source></picture>\n </div>\n </figure>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"37 26","pages":""},"PeriodicalIF":26.8000,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adma.202570173","citationCount":"0","resultStr":"{\"title\":\"Electron Release via Internal Polarization Fields for Optimal S-H Bonding States (Adv. Mater. 26/2025)\",\"authors\":\"Hyunho Seok, Minjun Kim, Jinill Cho, Sihoon Son, Yonas Tsegaye Megra, Jinhyoung Lee, Myeong Gyun Nam, Keon-Woo Kim, Kubra Aydin, Seong Soo Yoo, Hyeonjeong Lee, Vinit K. Kanade, Muyoung Kim, Jihun Mun, Jin Kon Kim, Ji Won Suk, Hyeong-U Kim, Pil J. Yoo, Taesung Kim\",\"doi\":\"10.1002/adma.202570173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron Release via Internal Polarization FieldsThe internal polarization field at the W–graphene heterointerface induces sulfur vacancy formation under ion bombardment, modulating the electronic structure via excess electron transfer. This enhances valence state filling of W and S atoms. This study highlights the relationship between the WS2 basal plane's electronic structure and electrocatalytic activity, focusing on optimizing S–H bonding. More details can be found in article number 2411211 by Hyeong-U Kim, Pil J. Yoo, Taesung Kim, and co-workers.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture>\\n </div>\\n </figure>\",\"PeriodicalId\":114,\"journal\":{\"name\":\"Advanced Materials\",\"volume\":\"37 26\",\"pages\":\"\"},\"PeriodicalIF\":26.8000,\"publicationDate\":\"2025-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adma.202570173\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adma.202570173\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adma.202570173","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

通过内部极化场释放电子w -石墨烯异质界面的内部极化场在离子轰击下诱导硫空位的形成，通过过量的电子转移调节电子结构。这增强了W和S原子的价态填充。本研究重点研究了WS2基面电子结构与电催化活性的关系，重点研究了S-H键的优化。详细内容请参见金炯宇（Hyeong-U Kim）、Pil J. Yoo、金泰成（Taesung Kim）等人撰写的2411211号文章。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Electron Release via Internal Polarization Fields for Optimal S-H Bonding States (Adv. Mater. 26/2025)

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Electron Release via Internal Polarization Fields for Optimal S-H Bonding States (Adv. Mater. 26/2025)

Electron Release via Internal Polarization Fields

The internal polarization field at the W–graphene heterointerface induces sulfur vacancy formation under ion bombardment, modulating the electronic structure via excess electron transfer. This enhances valence state filling of W and S atoms. This study highlights the relationship between the WS₂ basal plane's electronic structure and electrocatalytic activity, focusing on optimizing S–H bonding. More details can be found in article number 2411211 by Hyeong-U Kim, Pil J. Yoo, Taesung Kim, and co-workers.

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来源期刊

Advanced Materials 工程技术-材料科学：综合

CiteScore

43.00

自引率

4.10%

发文量

2182

审稿时长

2 months

期刊介绍： Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.