{"title":"利用探索锡含量梯度法制备室温下宽带短波红外GeSn发光二极管。","authors":"Jinlai Cui, Jun Zheng, Jiayi Li, Yiyang Wu, Renbi Zhao, Qinxing Huang, Zhi Liu, Yuhua Zuo, Buwen Cheng","doi":"10.1364/OL.561592","DOIUrl":null,"url":null,"abstract":"<p><p>Broadband shortwave-infrared (SWIR) light-emitting diodes (LEDs) are highly sought after for various sensing applications. In this study, we propose a novel, to the best of our knowledge, GeSn bandgap gradient structure to achieve broadband LEDs. We successfully fabricated GeSn LEDs that operate at room temperature and exhibit a broad emission spectrum by employing the Sn composition gradient technique. In the active layer, the Sn content gradually increased from 9% to 10.8%, resulting in electroluminescence (EL) ranging from 1700 to 2400 nm. Detailed spectral analysis revealed that the EL transition originates from the direct bandgap of GeSn. These findings suggest that the Sn composition gradient approach in GeSn structures holds significant promise for the development of wide-spectrum SWIR LEDs suitable for a range of sensing applications.</p>","PeriodicalId":19540,"journal":{"name":"Optics letters","volume":"50 13","pages":"4142-4145"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband shortwave infrared GeSn light-emitting diode at room temperature fabricated by exploring the Sn content gradient method.\",\"authors\":\"Jinlai Cui, Jun Zheng, Jiayi Li, Yiyang Wu, Renbi Zhao, Qinxing Huang, Zhi Liu, Yuhua Zuo, Buwen Cheng\",\"doi\":\"10.1364/OL.561592\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Broadband shortwave-infrared (SWIR) light-emitting diodes (LEDs) are highly sought after for various sensing applications. In this study, we propose a novel, to the best of our knowledge, GeSn bandgap gradient structure to achieve broadband LEDs. We successfully fabricated GeSn LEDs that operate at room temperature and exhibit a broad emission spectrum by employing the Sn composition gradient technique. In the active layer, the Sn content gradually increased from 9% to 10.8%, resulting in electroluminescence (EL) ranging from 1700 to 2400 nm. Detailed spectral analysis revealed that the EL transition originates from the direct bandgap of GeSn. These findings suggest that the Sn composition gradient approach in GeSn structures holds significant promise for the development of wide-spectrum SWIR LEDs suitable for a range of sensing applications.</p>\",\"PeriodicalId\":19540,\"journal\":{\"name\":\"Optics letters\",\"volume\":\"50 13\",\"pages\":\"4142-4145\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1364/OL.561592\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OL.561592","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
Broadband shortwave infrared GeSn light-emitting diode at room temperature fabricated by exploring the Sn content gradient method.
Broadband shortwave-infrared (SWIR) light-emitting diodes (LEDs) are highly sought after for various sensing applications. In this study, we propose a novel, to the best of our knowledge, GeSn bandgap gradient structure to achieve broadband LEDs. We successfully fabricated GeSn LEDs that operate at room temperature and exhibit a broad emission spectrum by employing the Sn composition gradient technique. In the active layer, the Sn content gradually increased from 9% to 10.8%, resulting in electroluminescence (EL) ranging from 1700 to 2400 nm. Detailed spectral analysis revealed that the EL transition originates from the direct bandgap of GeSn. These findings suggest that the Sn composition gradient approach in GeSn structures holds significant promise for the development of wide-spectrum SWIR LEDs suitable for a range of sensing applications.
期刊介绍：
The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community.
Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.
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