yking pr6011高k介电材料用于MIS光电子学中增强电荷控制

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-07-03 DOI:10.1016/j.mseb.2025.118569

T. Akila , V. Balasubramani , P. Gayathri , M. Aslam Manthrammel , Mohd Shkir

{"title":"yking pr6011高k介电材料用于MIS光电子学中增强电荷控制","authors":"T. Akila , V. Balasubramani , P. Gayathri , M. Aslam Manthrammel , Mohd Shkir","doi":"10.1016/j.mseb.2025.118569","DOIUrl":null,"url":null,"abstract":"<div><div>Flake-like MIS-type Schottky diode have gained significant attention for next-generation optoelectronic applications due to their enhanced light absorption, mechanical stability, and efficient charge transport. In this study, MIS Schottky barrier diodes were fabricated using Pr<sub>6</sub>O<sub>11</sub> thin films as the interfacial layer, synthesized via Jet Nebulizer Spray Pyrolysis [JNSP]. X-ray diffraction confirmed the formation of the cubic fluorite phase, with crystallite size increasing at elevated deposition temperatures. FE-SEM analysis revealed a morphological evolution from grain-like particles to well-defined flake-like structures at 450°C. Optical measurements showed a increase in the optical band gap from ∼ 3.88 eV to 4.00 eV with temperature. EDX and XPS confirmed the presence of Pr<sup>3+</sup>/Pr<sup>4+</sup> mixed valence states, indicative of non-stoichiometric composition. The Cu/Pr<sub>6</sub>O<sub>11</sub>/n-Si device exhibited a measurable photodetection response, with detectivity enhanced at 450 °C. To calculate responsivity and external quantum efficiency, demonstrate the material’s potential for optoelectronic applications and improve to achieve device performance.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"321 ","pages":"Article 118569"},"PeriodicalIF":3.9000,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Yoking Pr6O11 high-k dielectrics for enhanced charge control in MIS optoelectronics\",\"authors\":\"T. Akila , V. Balasubramani , P. Gayathri , M. Aslam Manthrammel , Mohd Shkir\",\"doi\":\"10.1016/j.mseb.2025.118569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Flake-like MIS-type Schottky diode have gained significant attention for next-generation optoelectronic applications due to their enhanced light absorption, mechanical stability, and efficient charge transport. In this study, MIS Schottky barrier diodes were fabricated using Pr<sub>6</sub>O<sub>11</sub> thin films as the interfacial layer, synthesized via Jet Nebulizer Spray Pyrolysis [JNSP]. X-ray diffraction confirmed the formation of the cubic fluorite phase, with crystallite size increasing at elevated deposition temperatures. FE-SEM analysis revealed a morphological evolution from grain-like particles to well-defined flake-like structures at 450°C. Optical measurements showed a increase in the optical band gap from ∼ 3.88 eV to 4.00 eV with temperature. EDX and XPS confirmed the presence of Pr<sup>3+</sup>/Pr<sup>4+</sup> mixed valence states, indicative of non-stoichiometric composition. The Cu/Pr<sub>6</sub>O<sub>11</sub>/n-Si device exhibited a measurable photodetection response, with detectivity enhanced at 450 °C. To calculate responsivity and external quantum efficiency, demonstrate the material’s potential for optoelectronic applications and improve to achieve device performance.</div></div>\",\"PeriodicalId\":18233,\"journal\":{\"name\":\"Materials Science and Engineering: B\",\"volume\":\"321 \",\"pages\":\"Article 118569\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering: B\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921510725005938\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725005938","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

片状mis型肖特基二极管由于其增强的光吸收、机械稳定性和高效的电荷输运而在下一代光电应用中获得了极大的关注。本研究以Pr6O11薄膜为界面层，采用喷射雾化器喷雾热解法[JNSP]制备MIS肖特基势垒二极管。x射线衍射证实了立方萤石相的形成，随着沉积温度的升高，晶体尺寸增大。FE-SEM分析显示，在450°C时，其形态由颗粒状颗粒演变为明确的片状结构。光学测量表明，随着温度的升高，光学带隙从3.88 eV增加到4.00 eV。EDX和XPS证实了Pr3+/Pr4+混合价态的存在，表明非化学计量组成。Cu/Pr6O11/n-Si器件表现出可测量的光探测响应，在450°C下探测率增强。为了计算响应度和外部量子效率，展示材料在光电应用方面的潜力，并改进以实现器件性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Yoking Pr6O11 high-k dielectrics for enhanced charge control in MIS optoelectronics

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Yoking Pr6O11 high-k dielectrics for enhanced charge control in MIS optoelectronics

Flake-like MIS-type Schottky diode have gained significant attention for next-generation optoelectronic applications due to their enhanced light absorption, mechanical stability, and efficient charge transport. In this study, MIS Schottky barrier diodes were fabricated using Pr₆O₁₁ thin films as the interfacial layer, synthesized via Jet Nebulizer Spray Pyrolysis [JNSP]. X-ray diffraction confirmed the formation of the cubic fluorite phase, with crystallite size increasing at elevated deposition temperatures. FE-SEM analysis revealed a morphological evolution from grain-like particles to well-defined flake-like structures at 450°C. Optical measurements showed a increase in the optical band gap from ∼ 3.88 eV to 4.00 eV with temperature. EDX and XPS confirmed the presence of Pr³⁺/Pr⁴⁺ mixed valence states, indicative of non-stoichiometric composition. The Cu/Pr₆O₁₁/n-Si device exhibited a measurable photodetection response, with detectivity enhanced at 450 °C. To calculate responsivity and external quantum efficiency, demonstrate the material’s potential for optoelectronic applications and improve to achieve device performance.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.