{"title":"设计缺陷钛和铋硫族化物:通过空位工程和外部原子掺入对结构-性能关系和器件制造的见解","authors":"Edwin J. Miller, and , Luisa Whittaker-Brooks*, ","doi":"10.1021/acsami.5c03153","DOIUrl":null,"url":null,"abstract":"<p >Titanium and bismuth chalcogenides exhibit a wide range of intriguing optical, electronic, and magnetic properties governed by their crystal structure and electronic configurations. These properties can be fine-tuned by deliberately manipulating defects and incorporating extrinsic atoms within their frameworks. Such structural and electronic modifications not only influence the intrinsic behavior of these materials but also offer alternative pathways for optimizing their performance for advanced applications. A comprehensive understanding of the interplay between size constraints, defects, and extrinsic atom integration is essential for the continued development of these systems and their use in functional devices. This review focuses on our synthetic strategies to engineer defects and incorporate extrinsic chalcogen atoms into low-dimensional metal chalcogenides, specifically in bismuth- and titanium-based chalcogenides. Precise structural and compositional modifications to these compounds lead to significant changes in their electronic and crystal properties, providing valuable insights into defect chemistry and its impact on material behavior. These findings are particularly relevant given the natural applicability of low-dimensional metal chalcogenides in various functional devices, including optoelectronics, thermoelectrics, and energy storage systems. Herein, we aim to establish a detailed correlation between the fundamental structure–property relationships and the resulting device performance, emphasizing the critical role of defects and extrinsic atomic engineering in unlocking the full potential of metal chalcogenide systems. This review not only underscores the versatility of these materials but also serves as a foundation for future efforts to design and optimize next-generation devices based on tailored low-dimensional compounds.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 28","pages":"39772–39794"},"PeriodicalIF":8.2000,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Designer-Defective Titanium and Bismuth Chalcogenides: Insights into Structure–Property Relationships and Device Fabrication via Vacancy Engineering and Extrinsic Atom Incorporation\",\"authors\":\"Edwin J. Miller, and , Luisa Whittaker-Brooks*, \",\"doi\":\"10.1021/acsami.5c03153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Titanium and bismuth chalcogenides exhibit a wide range of intriguing optical, electronic, and magnetic properties governed by their crystal structure and electronic configurations. These properties can be fine-tuned by deliberately manipulating defects and incorporating extrinsic atoms within their frameworks. Such structural and electronic modifications not only influence the intrinsic behavior of these materials but also offer alternative pathways for optimizing their performance for advanced applications. A comprehensive understanding of the interplay between size constraints, defects, and extrinsic atom integration is essential for the continued development of these systems and their use in functional devices. This review focuses on our synthetic strategies to engineer defects and incorporate extrinsic chalcogen atoms into low-dimensional metal chalcogenides, specifically in bismuth- and titanium-based chalcogenides. Precise structural and compositional modifications to these compounds lead to significant changes in their electronic and crystal properties, providing valuable insights into defect chemistry and its impact on material behavior. These findings are particularly relevant given the natural applicability of low-dimensional metal chalcogenides in various functional devices, including optoelectronics, thermoelectrics, and energy storage systems. Herein, we aim to establish a detailed correlation between the fundamental structure–property relationships and the resulting device performance, emphasizing the critical role of defects and extrinsic atomic engineering in unlocking the full potential of metal chalcogenide systems. This review not only underscores the versatility of these materials but also serves as a foundation for future efforts to design and optimize next-generation devices based on tailored low-dimensional compounds.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 28\",\"pages\":\"39772–39794\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.5c03153\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.5c03153","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Designer-Defective Titanium and Bismuth Chalcogenides: Insights into Structure–Property Relationships and Device Fabrication via Vacancy Engineering and Extrinsic Atom Incorporation
Titanium and bismuth chalcogenides exhibit a wide range of intriguing optical, electronic, and magnetic properties governed by their crystal structure and electronic configurations. These properties can be fine-tuned by deliberately manipulating defects and incorporating extrinsic atoms within their frameworks. Such structural and electronic modifications not only influence the intrinsic behavior of these materials but also offer alternative pathways for optimizing their performance for advanced applications. A comprehensive understanding of the interplay between size constraints, defects, and extrinsic atom integration is essential for the continued development of these systems and their use in functional devices. This review focuses on our synthetic strategies to engineer defects and incorporate extrinsic chalcogen atoms into low-dimensional metal chalcogenides, specifically in bismuth- and titanium-based chalcogenides. Precise structural and compositional modifications to these compounds lead to significant changes in their electronic and crystal properties, providing valuable insights into defect chemistry and its impact on material behavior. These findings are particularly relevant given the natural applicability of low-dimensional metal chalcogenides in various functional devices, including optoelectronics, thermoelectrics, and energy storage systems. Herein, we aim to establish a detailed correlation between the fundamental structure–property relationships and the resulting device performance, emphasizing the critical role of defects and extrinsic atomic engineering in unlocking the full potential of metal chalcogenide systems. This review not only underscores the versatility of these materials but also serves as a foundation for future efforts to design and optimize next-generation devices based on tailored low-dimensional compounds.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.