设计缺陷钛和铋硫族化物:通过空位工程和外部原子掺入对结构-性能关系和器件制造的见解

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Edwin J. Miller,  and , Luisa Whittaker-Brooks*, 
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引用次数: 0

摘要

钛和铋硫族化合物表现出一系列有趣的光学、电子和磁性能,这是由它们的晶体结构和电子构型决定的。这些特性可以通过故意操纵缺陷和在其框架内加入外部原子来微调。这种结构和电子修改不仅影响这些材料的内在行为,而且为优化其高级应用的性能提供了替代途径。全面了解尺寸限制、缺陷和外部原子集成之间的相互作用对于这些系统的持续发展及其在功能器件中的应用是必不可少的。本文综述了我们在低维金属硫族化合物中设计缺陷并将外源硫原子掺入的合成策略,特别是在铋基和钛基硫族化合物中。对这些化合物进行精确的结构和成分修饰,导致其电子和晶体性质发生重大变化,为缺陷化学及其对材料行为的影响提供了有价值的见解。考虑到低维金属硫族化物在各种功能器件(包括光电子、热电和储能系统)中的天然适用性,这些发现尤其相关。在此,我们的目标是建立基本结构-性质关系与最终器件性能之间的详细相关性,强调缺陷和外部原子工程在释放金属硫族化物系统的全部潜力中的关键作用。这一综述不仅强调了这些材料的多功能性,而且为未来设计和优化基于定制低维化合物的下一代器件奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Designer-Defective Titanium and Bismuth Chalcogenides: Insights into Structure–Property Relationships and Device Fabrication via Vacancy Engineering and Extrinsic Atom Incorporation

Designer-Defective Titanium and Bismuth Chalcogenides: Insights into Structure–Property Relationships and Device Fabrication via Vacancy Engineering and Extrinsic Atom Incorporation

Designer-Defective Titanium and Bismuth Chalcogenides: Insights into Structure–Property Relationships and Device Fabrication via Vacancy Engineering and Extrinsic Atom Incorporation

Titanium and bismuth chalcogenides exhibit a wide range of intriguing optical, electronic, and magnetic properties governed by their crystal structure and electronic configurations. These properties can be fine-tuned by deliberately manipulating defects and incorporating extrinsic atoms within their frameworks. Such structural and electronic modifications not only influence the intrinsic behavior of these materials but also offer alternative pathways for optimizing their performance for advanced applications. A comprehensive understanding of the interplay between size constraints, defects, and extrinsic atom integration is essential for the continued development of these systems and their use in functional devices. This review focuses on our synthetic strategies to engineer defects and incorporate extrinsic chalcogen atoms into low-dimensional metal chalcogenides, specifically in bismuth- and titanium-based chalcogenides. Precise structural and compositional modifications to these compounds lead to significant changes in their electronic and crystal properties, providing valuable insights into defect chemistry and its impact on material behavior. These findings are particularly relevant given the natural applicability of low-dimensional metal chalcogenides in various functional devices, including optoelectronics, thermoelectrics, and energy storage systems. Herein, we aim to establish a detailed correlation between the fundamental structure–property relationships and the resulting device performance, emphasizing the critical role of defects and extrinsic atomic engineering in unlocking the full potential of metal chalcogenide systems. This review not only underscores the versatility of these materials but also serves as a foundation for future efforts to design and optimize next-generation devices based on tailored low-dimensional compounds.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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