30 ps time resolution with 50 μm thick silicon Low Gain Avalanche Detectors fabricated by Micron Semiconductor Ltd

Low Gain Avalanche Detectors (LGADs) are silicon sensors with an implanted p-doped multiplication layer that is designed to provide a gain between five and twenty. Most importantly, LGADs can be specifically engineered to provide excellent temporal resolution. To achieve the goal of producing a 4D tracking detector, where both excellent spatial and temporal resolution are attained, LGAD technology must be optimised. Promising variations, such as the iLGAD and AC-LGAD, are being developed. The technology shows promising prospects of fulfilling the 4D tracking requirements of future particle physics experiments. Micron Semiconductor Ltd. has fabricated LGADs with an active thickness of $50\mu m$. The electrical performance has been measured by means of current–voltage characteristics and Transient Current Technique (TCT), while Minimum Ionising Particles (MIPs) from a Sr-90 source were used to measure the timing resolution, and compared with devices fabricated at IMB-CNM for reference. The fabricated devices were measured to have a gain of 5–10, a timing resolution of 26.5 ps using MIPs produced by a Sr-90 source, measured at a temperature of $-30°C$.