光电和热电用窄带隙双钙钛矿M2SbAuCl6 (M=Cs,K,Rb)的DFT研究

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mahalakshmi P. , Hannah Jeniffer I. , Nandhakumar Eswaramoorthy , Punithavelan N. , Abdullah N. Alodhayb , Khalid E. Alzahrani , Saravanan Pandiaraj , Sudharsan J.B.
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引用次数: 0

摘要

在本研究中,我们在密度泛函理论的范围内研究了无铅窄带隙双钙钛矿M2SbAuCl6 (M=Cs,K,Rb)的结构、力学、光电和输运性质。本文采用广义梯度近似和Trans Blaha-modified Becke-Johnson两种不同的交换相关泛函进行自洽场计算。力学分析表明,这些双钙钛矿具有延展性,其弹性常数满足Born-Huang稳定性准则。计算的维氏硬度表明,K2SbAuCl6比Cs2SbAuCl6和Rb2SbAuCl6更硬。电子性质计算证实了M2SbAuCl6 (M=Cs,K,Rb)在0.2 eV(广义梯度近似)和1.1 eV(Trans blahaa -modified Becke-Johnson)的窄带隙下的半导体行为。我们还研究了光学性质,包括吸收系数、介电响应和电导率;由此可以很好地推断出材料在紫外和可见光区的吸收能力。此外,还对M2SbAuCl6 (M=Cs,K,Rb)的热电性能进行了研究,在500 K、400 K和400 K时,材料的优异值分别为2.55、2.27和2.43。我们的理论研究表明M2SbAuCl6 (M=Cs,K,Rb)是光电子和热电器件应用的合适候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
DFT study on narrow band gap double perovskites M2SbAuCl6 (M=Cs,K,Rb) for optoelectronic and thermoelectric applications
In the present study, we studied the structural, mechanical, optoelectronic and transport properties of lead-free narrow band gap double perovskites M2SbAuCl6 (M=Cs,K,Rb) within the realm of density functional theory. Here, two different exchange-correlation functionals such as generalized gradient approximation and Trans Blaha-modified Becke-Johnson were used for self-consistency field calculation. The mechanical analysis indicates that these double perovskites are ductile, with elastic constants satisfying the Born-Huang stability criteria. The calculated Vicker’s hardness shows that K2SbAuCl6 is harder than Cs2SbAuCl6 and Rb2SbAuCl6. Electronic property calculations confirm the semiconducting behavior of M2SbAuCl6 (M=Cs,K,Rb) with narrow band gaps around 0.2 eV(Generalized gradient approximation) and 1.1 eV(Trans Blaha-modified Becke-Johnson). We also explored optical properties including absorption coefficient, dielectric response and electrical conductivity; that well infers the absorption capability of the materials in ultraviolet and visible region. Additionally, the thermoelectric property of M2SbAuCl6 (M=Cs,K,Rb) has also been studied, in which the materials exhibit high figure of merit values of 2.55, 2.27 and 2.43 at 500 K, 400 K and 400 K respectively. Our theoretical study suggests that M2SbAuCl6 (M=Cs,K,Rb) are suitable candidates for both optoelectronic and thermoelectric device applications.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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