用于可穿戴12导联心电采集系统的0.6 v 9.38位6.9 k /s电容分流旁路窗口SAR ADC

IF 2.8 2区 工程技术 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Kangkang Sun;Jingjing Liu;Feng Yan;Yuan Ren;Ruihuang Wu;Bingjun Xiong;Zhipeng Li;Jian Guan
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引用次数: 0

摘要

本文提出了一种用于可穿戴12导联心电图采集系统的全差分10位节能逐次逼近寄存器(SAR)数模转换器(ADC)。该ADC结构通过电容分裂技术产生两个旁路窗口,可以跳过不必要的量化步骤。旁路窗的判断模块只需要一个异或门。通过引入冗余电容参与量化,使总电容值减小一半。所提出的SAR ADC采用标准的180纳米CMOS工艺制造。测量结果表明,在电源电压为0.6 V、采样率($\text{F}_{\ maththrm {S}}$)为6.94 kS/ S的情况下,有效位元数(ENOBs)为9.38位,无杂散动态范围(SFDR)为76.71 dB。当受到1.17- $ $\text{V}_{\ maththrm {PP}}~3.45$ - khz正弦输入时,功耗为15.61 nW,从而产生3.38 fJ/ conv.step的品质因数(FoM)。量化12导联心电信号的平均功耗约为12.66 nW,证明了实现心电信号超低功耗量化的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.6-V 9.38-Bit 6.9-kS/s Capacitor-Splitting Bypass Window SAR ADC for Wearable 12-Lead ECG Acquisition Systems
This article proposes a fully differential ten-bit energy-efficient successive approximation register (SAR) analog-to-digital converter (ADC) for wearable 12-lead electrocardiogram (ECG) acquisition system. The proposed ADC structure generates two bypass windows through capacitor splitting technique, which can skip unnecessary quantization steps. The judgment module of bypass windows only requires an XOR gate. By introducing redundant capacitors to participate in quantization, the total capacitance value is reduced by half. The proposed SAR ADC is fabricated using a standard 180-nm CMOS process. The measurement results show that it can achieve an effective number of bits (ENOBs) of 9.38 bits and a spurious-free dynamic range (SFDR) of 76.71 dB with a supply voltage of 0.6 V at a sampling rate ( $\text{F}_{\mathrm {S}}$ ) of 6.94 kS/s. The power consumption is 15.61 nW when subjected to a 1.17- $\text{V}_{\mathrm {PP}}~3.45$ -kHz sinusoidal input, resulting in a figure of merit (FoM) of 3.38 fJ/conv.-step. The average power consumption for quantizing 12-lead ECG signals is approximately 12.66 nW, demonstrating the ability to achieve ultralow-power quantization of ECG signals.
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来源期刊
CiteScore
6.40
自引率
7.10%
发文量
187
审稿时长
3.6 months
期刊介绍: The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society. Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels. To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.
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